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Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer

具有电荷存储层的快速响应、高稳定、高效率全彩 量子点发光二极管

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Abstract

Recently, solution-processed quantum dot light-emitting diodes (QLEDs) have emerged as a promising candidate for next-generation lighting and display devices. However, when given a constant voltage or current, the QLEDs need a certain working time to reach their maximum brightness. Such positive aging challenge, dramatically reducing the response speed of the device and causing a luminescence delay, is urgent to be investigated and resolved. In the current work, we introduce a charge-storage layer architecture by inserting copper(I) thiocyanate (CuSCN) between the organic hole-injection layer and hole-transport layer. The extracted holes will be released during the next electrical signal stimulation to increase the efficiency of charge transport. As a result, the response speed of the QLEDs is improved by an order of magnitude. In addition, by inserting an inorganic CuSCN layer, the efficiency, lifetime, and environmental stability of red/green/blue full-color QLEDs are enhanced simultaneously. Moreover, this work provides a generic strategy for the fabrication of fast-response and high-efficiency full-color QLEDs without luminescence delay, which plays a critical role in the practical industrialization of QLEDs.

摘要

溶液法处理的量子点发光二极管(QLEDs)已经成为下一代照明 和显示器件有希望的候选者. 然而, QLEDs的正向老化问题会极大地降 低器件的响应速度并导致发光延迟, 严重限制了QLEDs器件在高动态 显示领域的应用. 本文中, 我们在有机空穴注入层和空穴传输层之间引 入电荷存储层硫氰酸亚铜(CuSCN), 存储的空穴将在下一次电信号刺 激期间释放以提高电荷传输效率, 从而使QLEDs器件的响应速度提高 一个数量级. 此外, 通过插入无机CuSCN层, 红/绿/蓝全彩QLEDs 器件 的效率、寿命和环境稳定性同时得到了提升. 这项工作为制造快速响 应和高性能的全彩QLEDs提供了一种通用策略.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (62075043), and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (2021ZZ126).

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Author notes

  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, China

    Yangbin Zhu  (朱阳斌), Yang Liu  (刘洋), Hailong Hu  (胡海龙), Zhongwei Xu  (徐中炜), Jieyu Bai  (白洁玉), Kaiyu Yang  (杨开宇), Tailiang Guo  (郭太良) & Fushan Li  (李福山)

  2. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350116, China

    Yangbin Zhu  (朱阳斌), Tailiang Guo  (郭太良) & Fushan Li  (李福山)

Authors
  1. Yangbin Zhu  (朱阳斌)
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  2. Yang Liu  (刘洋)
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  3. Hailong Hu  (胡海龙)
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Contributions

Author contributions Li F initiated and coordinated the research; Zhu Y and Liu Y designed the samples; Zhu Y performed the experiments; Liu Y performed the data analysis; Zhu Y, Liu Y and Hu H wrote the paper with support from Li F; Xu Z, Bai J, Yang K and Guo T participated in the discussion and analysis of the data. All authors contributed to the general discussion.

Corresponding author

Correspondence to Fushan Li  (李福山).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Supplementary information Experimental details and supporting data are available in the online version of the paper.

Fushan Li received his PhD degree from Peking University in 2005. He became a research professor at Hanyang University of Korea in 2007, and a research fellow at Nanyang Technological University in 2010. Now he is a full professor at Fuzhou University in China. His research mainly focuses on the nano-optoelectronic devices utilizing semiconductor nanoparticles, carbon-based nanomaterials and novel 2D atomic crystals.

Yangbin Zhu is now a PhD student at the College of Physics and Information Engineering, Fuzhou University, under Prof. Fushan Li’s supervision. His research topic is smart quantum dot light-emitting devices and artificial neural networks.

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Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer

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Zhu, Y., Liu, Y., Hu, H. et al. Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer. Sci. China Mater. 65, 1012–1019 (2022). https://doi.org/10.1007/s40843-021-1796-6

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