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Growth and Characterization of Pencil-Like ZnO Nanowires in the Presence of a Disturbance in Boundary Layer

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Acta Metallurgica Sinica (English Letters) Aims and scope

Abstract

Pencil-like zinc oxide (ZnO) nanowire was synthesized on Si (111) substrate through a simple vapor phase method using a mixture of zinc oxide and graphite as the source material. The source inside a quartz tube created a Zn-rich vapor that facilitated the formation and growth of ZnO nanowires. Field emission scanning electron microscopic studies indicated that pencil-like ZnO nanowires had a size of the range from 50 to 150 nm in diameter and several microns in length. X-ray diffraction was used to investigate the crystal structure of ZnO nanowires. Raman scattering and photoluminescence were applied to characterize the optical properties of the pencils. The growth mechanism of the nanopencils was discussed based on the growth conditions.

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Acknowledgments

This work was supported by the Universiti Putra Malaysia through Grant Nos. Fundamental Research Grant Scheme (FRGS) vote: 02-01-14-1469FR.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Farhangian University, Shahid Rajaee Pardis, Shiraz, 71456-15515, Iran

    A. Kamalianfar

  2. Ministry of Education, Fars Education, Shiraz, 74347-86187, Iran

    A. Kamalianfar & Marzih Kamalianfar

  3. Department of Physics, Faculty of Science, Malayer University, Malayer, 65719-95863, Iran

    Mahmoud Godarz Naseri

  4. Department of Physics, Faculty of Science, University Putra Malaysia, UPM, 43400, Serdang, Selangor, Malaysia

    S. A. Halim & K. P. Lim

Authors
  1. A. Kamalianfar
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  2. Mahmoud Godarz Naseri
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  3. Marzih Kamalianfar
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  4. S. A. Halim
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  5. K. P. Lim
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Correspondence to A. Kamalianfar.

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Kamalianfar, A., Naseri, M.G., Kamalianfar, M. et al. Growth and Characterization of Pencil-Like ZnO Nanowires in the Presence of a Disturbance in Boundary Layer. Acta Metall. Sin. (Engl. Lett.) 29, 595–600 (2016). https://doi.org/10.1007/s40195-016-0425-y

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  • DOI: https://doi.org/10.1007/s40195-016-0425-y

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