Abstract
Zinc selenide (ZnSe) thin films with various thicknesses were grown on ultrasonically clean glass substrates using vacuum evaporation of 99.99% pure ZnSe powder. Thickness dependence of the structural, optical and electrical properties was thoroughly investigated. X-ray diffraction (XRD) analyses revealed that (110) ZnSe plane is the dominant crystal plane for all the fabricated films. Both dislocation density and micro-strain go down with the increase in film thickness, indicating lower lattice defects and improvement in crystallinity at higher film thickness. Transmittance spectra show that all the films have almost linear upward tendency of transmittance in near-infrared region and small fluctuations in visible region for higher-thickness films. With the increase in film thickness, the optical bandgap increases and also an increasing tendency of dielectric constant was observed. Studies of electrical properties showed a sharp increase in carrier mobility and concentration with film thickness. As the film thickness increases from 30 to 90 nm, the carrier mobility goes up from 255 to 1250 cm2/VS and the carrier concentration increases from 2.14 × 1018 to 9.37 × 1018 cm−3. The electrical transport properties of the deposited thin films were explained in terms of scattering of the charge carrier.
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References
Ullrich, B.: Comparison of the photocurrent of ZnSe/InSe/Si and ZnSe/Si heterojunctions. Mater. Sci. Eng., B 56(1), 69–71 (1998)
Alfano, R.R., Wang, Q.Z., Jimbo, T., Ho, P.P., Bhargava, R.N., Fitzpatrick, B.J.: Induced spectral broadening about a second harmonic generated by an intense primary ultrashort laser pulse in ZnSe crystals. Phys. Rev. A 35(1), 459 (1987)
Son, D., Jung, D.R., Kim, J., Moon, T., Kim, C., Park, B.: Synthesis and photoluminescence of Mn-doped zinc sulfide nanoparticles. Appl. Phys. Lett. 90(10), 101910 (2007)
Khan, T.M., Zakria, M., Ahmad, M., Shakoor, R.I.: Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films. J. Lumin. 147, 97–106 (2014)
Simpson, J., Wang, S.Y., Stewart, H., Wallace, J., Adams, S.J.A., Hauksson, I., Prior, K.A., Cavenett, B.C.: Electrical and optical characterization of p-type ZnSe for diode laser structures. J. Electron. Mater. 22(5), 431–435 (1993)
Khan, T.M., Mehmood, M.F., Mahmood, A., Shah, A., Raza, Q., Iqbal, A., Aziz, U.: Synthesis of thermally evaporated ZnSe thin film at room temperature. Thin Solid Films 519(18), 5971–5977 (2011)
Chu, T.L., Chu, S.S., Chen, G., Britt, J., Ferekides, C., Wu, C.Q.: Zinc selenide films and heterojunctions. J. Appl. Phys. 71(8), 3865–3869 (1992)
Khan, T.M., BiBi, T.: Compatibility and optoelectronic of ZnSe nano crystalline thin film. Chin. Phys. B 21(9), 097303 (2012)
Kale, R.B., Lokhande, C.D., Mane, R.S., Han, S.H.: Use of modified chemical route for ZnSe nanocrystalline thin films growth: study on surface morphology and physical properties. Appl. Surf. Sci. 252(16), 5768–5775 (2006)
Patidar, D., Rathore, K.S., Saxena, N.S., Sharma, K., Sharma, T.P.: Determination of optical and electrical properties of ZnSe thin films. J. Mod. Opt. 55(18), 3041–3047 (2008)
Yoo, J.B., Fahrenbruch, A.L., Bube, R.H.: Effect of a thin intermediate zinc selenide layer on the properties of CuInSe2 solar cells. Solar Cells. 31(2), 171–180 (1991)
Banerjee, S., Pal, R., Maity, A.B., Chaudhuri, S., Pal, A.K.: Nanocrystalline ZnSe films prepared by high pressure magnetron sputtering. Nanostruct. Mater. 8(3), 301–312 (1997)
Pal, R., Maiti, B., Chaudhuri, S., Pal, A.K.: ZnSe films: preparation and properties. Vacuum 46(11), 1255–1260 (1995)
Vanzetti, L., Bonanni, A., Bratina, G., Sorba, L., Franciosi, A., Lomascolo, M., Greco, D., Cingolani, R.: Influence of growth parameters on the properties of ZnSe-GaAs (001) heterostructures. J. Cryst. Growth 150, 765–769 (1995)
Mitsuhashi, H., Mitsuishi, I., Mizuta, M., Kukimoto, H.: Coherent growth of ZnSe on GaAs by MOCVD. Jpn. J. Appl. Phys. 24(8A), L578 (1985)
Khan, T.M.: Into the nature of Pd-dopant induced local phonon modes and associated disorders in ZnO; based on spatial correlation model. Mater. Chem. Phys. 153, 248–255 (2015)
Khan, T.M., Bibi, T., Hussain, B.: Synthesis and optical study of heat-treated ZnO nanopowder for optoelectronic applications. Bull. Mater. Sci. 38(7), 1851–1858 (2015)
Khan, T.M., Zakria, M., Shakoor, R.I., Raffi, M., Ahmad, M.: Mechanisms of composite-hydroxide-mediated approach for the synthesis of functional ZnO nanostructures and morphological dependent optical emissions. Adv. Mater. Lett 6, 592–599 (2015)
Khan, T.M., Iqbal, A., Zakria, M.: Study of excitonic UV emission stability, green luminescence and bandgap tune-ability in wurtzite (ZnO)1-x(Cr2O3)x composite. Vacuum 105, 1–6 (2014)
Khan, T.M., Irfan, M.: Studies on the complex behavior of optical phonon modes in wurtzite (ZnO)1-x(Cr2O3)x. Appl. Phys. A 117(3), 1275–1282 (2014)
Gümüs, C., Ozkendir, O., Kavak, H., Ufuktepe, Y.: Structural and optical properties of zinc oxide thin films prepared by spray pyrolysis method. Journal of Optoelectronics and Advanced Materials. 8(1), 299–303 (2006)
Iqbal, A., Mahmood, A., Khan, T.M., Ahmed, E.: Structural and optical properties of Cr doped ZnO crystalline thin films deposited by reactive electron beam evaporation technique. Progress Nat Sci Mater Int 23(1), 64–69 (2013)
Tauc, J., Grigorovici, R., Vancu, A.: Optical properties and electronic structure of amorphous germanium. Physica Status Solidi (b). 15(2), 627–637 (1966)
Khan, T.M.: A comparative study of physical properties of pure and In-doped nanostructured ZnO polycrystalline thin film for optoelectronic applications. J. Mater. Sci. Mater. Electron. 25(4), 1673–1680 (2014)
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Sayeed, M.A., Rouf, H.K. & Hussain, K.M.A. Effect of thickness on characteristics of ZnSe thin film synthesized by vacuum thermal evaporation. J Theor Appl Phys 14, 251–259 (2020). https://doi.org/10.1007/s40094-020-00378-1
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DOI: https://doi.org/10.1007/s40094-020-00378-1