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Electrical and optical characterization of p-type ZNSe for diode laser structures

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Abstract

The doping properties of nitrogen in ZNSe to produce p-type material have been explored by photo-assisted molecular beam epitaxy. These prelimiNAry results show that changes in NA - ND with ultraviolet irradiation are due to the effect of the laser on the selenium aND so far no primary photoeffect has been observed. Photoluminescence measurements on the ZNSe:N layers show the presence of a second donor-acceptor pair recombination due to deep donors that has been assigned to VSe-NSe pairs. The change in carrier concentration profile with time for ZNSe:N supports the involvement of a NAtive defect in the compensation process. ZnCdSe/ZNSe quantum well laser diodes have been fabricated showing blue emission at 475 nm.

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Authors and Affiliations

  1. Department of Physics, Heriot-Watt University, 14 4AS, Edinburgh, EH, UK

    J. Simpson, S. Y. Wang, H. Stewart, J. Wallace, S. J. A. Adams, I. Hauksson, K. A. Prior & B. C. Cavenett

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  1. J. Simpson
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  2. S. Y. Wang
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  3. H. Stewart
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  4. J. Wallace
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  5. S. J. A. Adams
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  6. I. Hauksson
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  7. K. A. Prior
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  8. B. C. Cavenett
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Simpson, J., Wang, S.Y., Stewart, H. et al. Electrical and optical characterization of p-type ZNSe for diode laser structures. J. Electron. Mater. 22, 431–435 (1993). https://doi.org/10.1007/BF02661608

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  • DOI: https://doi.org/10.1007/BF02661608

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