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SiC Substrate effects on electron transport in the epitaxial graphene layer

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Abstract

Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one high-mobility carrier (3493 cm2/Vs at 300 K) and one low-mobility carrier (1115 cm2/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.

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Authors and Affiliations

  1. Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800, Ankara, Turkey

    Engin Arslan, Semih Çakmakyapan, Özgür Kazar, Serkan Bütün, Neval A. Cinel & Ekmel Özbay

  2. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    Sefer Bora Lişesivdin

  3. Department of Chemistry, Bilkent University, 06800, Bilkent, Turkey

    Gülay Ertaş

  4. Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir, Turkey

    Şükrü Ardalı & Engin Tıraş

  5. Department of Physics, Chemistry and Biology, Linkoping University of Technology, S-58183, Linkoping, Sweden

    Jawad-ul-Hassan & E. Janzén

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  1. Engin Arslan
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  2. Semih Çakmakyapan
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Correspondence to Engin Arslan.

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Arslan, E., Çakmakyapan, S., Kazar, Ö. et al. SiC Substrate effects on electron transport in the epitaxial graphene layer. Electron. Mater. Lett. 10, 387–391 (2014). https://doi.org/10.1007/s13391-013-3159-2

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  • DOI: https://doi.org/10.1007/s13391-013-3159-2

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