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Electrical and optical properties of in and Al doped ZnO thin film

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Abstract

In this study, to improve the electrical and optical properties of aluminium (Al) doped zinc oxide thin films, we have added small amounts of indium (In) to Al doped ZnO thin films. We will present the results of In and Al doped ZnO thin film on glass substrates prepared by the sol-gel processing method. A rapid thermal annealing process was applied to cure the thin film properties. Different amounts of In were used to dope the AZO thin films to find the optimum process condition. The effects of crystallinity were analyzed by an x-ray diffraction method. In addition, the optical transmittance and electrical proprties of In doped AZO thin films were investigated.

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Authors and Affiliations

  1. Department of Materials Engineering, Kwangwoon University, Seoul, 139-701, Korea

    Sang-Uk Park & Jung-Hyuk Koh

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  1. Sang-Uk Park
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  2. Jung-Hyuk Koh
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Correspondence to Jung-Hyuk Koh.

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Park, SU., Koh, JH. Electrical and optical properties of in and Al doped ZnO thin film. Electron. Mater. Lett. 9, 493–496 (2013). https://doi.org/10.1007/s13391-013-0046-9

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  • DOI: https://doi.org/10.1007/s13391-013-0046-9

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