Abstract
The features of the InAs, InSb, GaAs, and GaSb ultra-smooth surface have been investigated using chemical–mechanical polishing with the (NH4)2Cr2O7–HBr–CH2(OH)CH2(OH)-etching solutions. The etching rate of the semiconductors has been measured as a function of the solution saturation by organic solvent (ethylene glycol). It was found that mechanical effect significantly increases the etching rate from 1.5 to 57 µm/min, and the increase of the organic solvent concentration promotes the decrease of the damaged layer-removing rate. According to AFM, RS, HRXRD results, the treatment with the (NH4)2Cr2O7–HBr–ethylene glycol solutions produces the clean surface of the nanosize level (Ra < 0.5 nm).
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Levchenko, I., Tomashyk, V., Stratiychuk, I. et al. Formation of the InAs-, InSb-, GaAs-, and GaSb-polished surface. Appl Nanosci 8, 949–953 (2018). https://doi.org/10.1007/s13204-018-0788-7
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DOI: https://doi.org/10.1007/s13204-018-0788-7