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Barrier modification of Au/n-GaAs Schottky structure by organic interlayer

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Abstract

Schottky contacts of Au/n-GaAs diodes with and without organic interlayer were fabricated. The room-temperature I–V and C–V characteristics were analyzed in both forward and reverse bias conditions. The forward current followed thermionic emission, whereas the reverse current followed tunneling mechanism. The barrier height of the modified structure revealed an enhancement due to organic interlayer compared to the pure diode. The increment was explained on the basis of organic interlayer-induced dipole at the interface. The modification was also found to passivate the GaAs surface and reduce the reverse leakage current.

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Acknowledgments

Authors are grateful for the fruitful discussions with Dr. K Asokan. The technical support from Mr. S. R Abhilash (IUAC, India) is also acknowledged. A.B. would like to thank Department of Science and Technology, India, for the financial support under Grant No. SB/FTP/PS-072/2013.

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Authors and Affiliations

  1. Department of Applied Physics, Indian School of Mines, Dhanbad, 826004, India

    A. Bobby, N. Shiwakoti, P. S. Gupta & B. K. Antony

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  1. A. Bobby
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  2. N. Shiwakoti
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  4. B. K. Antony
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Bobby, A., Shiwakoti, N., Gupta, P.S. et al. Barrier modification of Au/n-GaAs Schottky structure by organic interlayer. Indian J Phys 90, 307–312 (2016). https://doi.org/10.1007/s12648-015-0764-y

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  • DOI: https://doi.org/10.1007/s12648-015-0764-y

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