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Modified Gate Oxide Double Gate Tunnel Field-Effect Transistor

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Abstract

This paper proposes a unique Tunnel Field-Effect Transistor (TFET) structure in which the gate oxide is modified, and the performances of the device are analyzed using Sentaurus, TCAD simulator. The gate oxide is submerged by optimized depth into the channel, as a result of which the OFF-state current (IOFF) of the proposed device reduces. Because of the better alignment of the energy bands and reduction in tunneling width, the ON-state current (ION) of Modified Gate Oxide Double Gate TFET (MGO DGTFET) is improved in comparison with the conventional Double Gate TFET (DGTFET). In contrast to the conventional DGTFET, IOFF is decremented by 5 × 102 times, and ION is incremented by 102 times; as a result, the ION/IOFF ratio is incremented by 3 × 105 times. Ambipolar current (IAmb) and subthreshold slope (SS) are also reduced in MGO DGTFET by a considerable margin. The MGO DGTFET’s superior performance makes it a good option for low-power applications.

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Acknowledgments

I acknowledge the Electronics department of NIT, Rourkela, for providing the software.

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Authors and Affiliations

  1. Department of Electrical Engineering, National Institute of Technology, Rourkela, Odisha, 769008, India

    Priyanka Karmakar & P. K. Sahu

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  1. Priyanka Karmakar
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  2. P. K. Sahu
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Contributions

The first author is a Doctoral research scholar at the National Institute of Technology, Rourkela, India, and the second author is the supervisor of his Ph.D. program. All the authors have jointly contributed to this research. As the authors are student and guide, respectively, all contributions towards the manuscript preparation are significant.

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Correspondence to Priyanka Karmakar.

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Karmakar, P., Sahu, P.K. Modified Gate Oxide Double Gate Tunnel Field-Effect Transistor. Silicon 14, 6729–6736 (2022). https://doi.org/10.1007/s12633-021-01433-5

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