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Comparison Study of DG-MOSFET with and without Gate Stack Configuration for Biosensor Applications

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Abstract

In this Paper, we have studied and compared the performance of two different configurations of simulation model advanced MOSFET devices which can be used for biosensor application. The bio-molecules like protein, biotin, streptavidin, APTES, etc., undergo label free electrical detection with the help of dielectrical modulation technique in order to overcome the limitations of short channel effect in a more efficient way. The bio-molecules trapped inside the cavity region change the electrical parameters of the MOSFET. Biosensors based on MOSFETs have certain issues, like short channel effects (SCEs) and problems related to scaling and power supply. Therefore the proposed device is better withstand to SCEs and can be consider as an alternative for biosensing applications. For channel material, silicon is used for both the configurations i.e. with stack and without stack model and we have also studied the performance of the device based on the analog as well as RF parameters by considering the protein as bio-molecule in the cavity. Two different oxide materials are used to design the device structure such as HfO2 (K = 25) and SiO2 (K = 3.9) and for simulation purpose the 2D Sentrausu TCAD simulator has been used. The sensing capability of this proposed dielectric modulated device can be applicable for IOT based applications. They can also be uses in health IOT systems for medical research applications and as bio chip sensor in wearable device so as to study the protein content of the human body.

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Acknowledgments

The authors would like to thank KIIT University, and Silicon Institute of Technology, Patia Hills, Bhubaneswar, for their valuable support in carrying out this research work.

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The authors confirm that the data supporting the findings of this study are available within the artice,its supplementary materials or below mentioned in the references.

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Authors and Affiliations

  1. School of Electronics Engineering, Kalinga Institute of Industrial Technology, Bhubaneswar, Odisha, India

    Saradiya Kishor Parija & Pradipta Dutta

  2. Electronics and Communication Engineering Department, Gandhi Institute for Technology, Bhubaneswar, Odisha, India

    Saradiya Kishor Parija

  3. Electronics and Communication Engineering Department, Silicon Institute of Technology, Bhubaneswar, Odisha, India

    Sanjit Kumar Swain

  4. Budge Budge Institute of Technology Kolkata, Electronics and communication Engineering Department, West Bengal, India

    Sarosij Adak

  5. Electronics and Instrumentation Engineering Department, Silicon Institute of Technology, Bhubaneswar, Odisha, India

    Sudhansu Mohan Biswal

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  1. Saradiya Kishor Parija
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  4. Sudhansu Mohan Biswal
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  5. Pradipta Dutta
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Contributions

Saradiya Parija-Simulation and Writing original draft preparation.

Sanjit Kumar Swain-Conceptualization.

Sarosij Adak-Methodology and simulation.

Sudhansu Mohan Biswal-Investigation and analysis of sensitivity parameters.

Pradipta Dutta-Reviewing and editing.

Corresponding author

Correspondence to Sarosij Adak.

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Parija, S.K., Swain, S.K., Adak, S. et al. Comparison Study of DG-MOSFET with and without Gate Stack Configuration for Biosensor Applications. Silicon 14, 3629–3640 (2022). https://doi.org/10.1007/s12633-021-01118-z

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