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Impact of Temperature Variation on Analog, Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs

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Abstract

Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding temperature affects its performances, such as hot carrier injection (HCI) degradation, Linearity distortion, and analog performance, which are to be critically analyzed. In the present paper, the analog performance, HCI degradation, and Linearity distortion of NJL-DGAA MOSFETs are investigated on temperatures ranging from 200K to 500K using a Sentaurus 3D device simulator. The parameters such as ON-current, OFF-current, DIBL, subthreshold swing (SS), transconductance, gate leakage current, high-order gm, VIP2, VIP3, IIP3, IMD3, and 1-dB compression point have been evaluated for the mentioned temperature range. The ON-current and DIBL are found to be increased by 17.2 % and 27.5 %, respectively, when the temperature increases from 200K to 500K. However, assessment of performance reveals that the NJL-DGAA devices offer superior analog performance with high-frequency applications even at higher temperature ranges.

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Acknowledgements

One of the authors, Mr. Vaibhav Purwar, acknowledges the Sentaurus device simulation facility received from Dr. Pramod Kumar Tiwari, Associate Professor, Department of Electrical Engineering, IIT, Patna, Bihar, India.

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Authors and Affiliations

  1. Department of Electronics & Communication Engineering, Kanpur Institute of Technology, Kanpur, Uttar Pradesh, 208001, India

    Nitish Kumar & Himanshi Awasthi

  2. Department of Electronics & Communication Engineering, PSIT College of Engineering Kanpur, Kanpur, Uttar Pradesh, 209305, India

    Vaibhav Purwar

  3. Department of Electronics Engineering, Rajkiya Engineering College, Sonbhadra, Uttar Pradesh, 231206, India

    Abhinav Gupta

  4. Department of Physics, L.N.D. College Motihari (B.R.A. Bihar University), Bihar, 845401, India

    Sarvesh Dubey

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  1. Nitish Kumar
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  4. Abhinav Gupta
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  5. Sarvesh Dubey
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All authors have made substantial contributions to the conception and design, or acquisition of data, or analysis and interpretation of data; have been involved in drafting the manuscript or revising it critically for important intellectual content, and have given final approval of the version be published. Each author has participated sufficiently in work to take public responsibility for appropriate portions of the content. All authors read and approved the final manuscript.

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Correspondence to Vaibhav Purwar.

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Kumar, N., Awasthi, H., Purwar, V. et al. Impact of Temperature Variation on Analog, Hot-Carrier Injection and Linearity Parameters of Nanotube Junctionless Double-Gate-All-Around (NJL-DGAA) MOSFETs. Silicon 14, 2679–2686 (2022). https://doi.org/10.1007/s12633-021-01069-5

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