Skip to main content
SpringerLink
Log in

Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules

  • Letter
  • Published:
Rare Metals Aims and scope Submit manuscript

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

References

  1. Sangwan VK, Hersam MC. Electronic transport in two-dimensional materials. Annu Rev Phys Chem. 2018;69:299.

    Article  CAS  Google Scholar 

  2. Ferrari AC, Bonaccorso F, Fal’ko V, Novoselov KS, Roche S, Boggild P, Borini S, Koppens FH, Palermo V, Pugno N, Garrido JA, Sordan R, Bianco A, Ballerini L, Prato M, Lidorikis E, Kivioja J, Marinelli C, Ryhanen T, Morpurgo A, Coleman JN, Nicolosi V, Colombo L, Fert A, Garcia-Hernandez M, Bachtold A, Schneider GF, Guinea F, Dekker C, Barbone M, Sun Z, Galiotis C, Grigorenko AN, Konstantatos G, Kis A, Katsnelson M, Vandersypen L, Loiseau A, Morandi V, Neumaier D, Treossi E, Pellegrini V, Polini M, Tredicucci A, Williams GM, Hong BH, Ahn JH, Kim JM, Zirath H, van Wees BJ, van der Zant H, Occhipinti L, Di Matteo A, Kinloch IA, Seyller T, Quesnel E, Feng X, Teo K, Rupesinghe N, Hakonen P, Neil SR, Tannock Q, Lofwander T, Kinaret J. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale. 2015;7(11):4598.

    Article  CAS  Google Scholar 

  3. Butler SZ, Hollen SM, Cao L, Cui Y, Gupta JA, Gutiérrez HR, Heinz TF, Hong SS, Huang J, Ismach AF. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano. 2013;7(4):2898.

    Article  CAS  Google Scholar 

  4. Meng LJ, Ma Y, Si KP, Xu SY, Wang JL, Gong YJ. Recent advances of phase engineering in group VI transition metal dichalcogenides. Tungsten. 2019;1(1):46.

    Article  Google Scholar 

  5. Liu JB, Hu JY, Liu C, Tan YM, Peng X, Zhang Y. Mechanically exfoliated MoS2 nanosheets decorated with SnS2 nanoparticles for high-stability gas sensors at room temperature. Chin J Rare Met. 2021;40(6):1536.

    Article  CAS  Google Scholar 

  6. Gao Y, Hong YL, Yin LC, Wu Z, Yang Z, Chen ML, Liu Z, Ma T, Sun DM, Ni Z. Ultrafast growth of high-quality monolayer WSe2 on Au. Adv Mater. 2017;29(29):1700990.

    Article  Google Scholar 

  7. Vu QA, Lee JH, Nguyen VL, Shin YS, Lim SC, Lee K, Heo J, Park S, Kim K, Lee YH. Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity. Nano Lett. 2017;17(1):453.

    Article  CAS  Google Scholar 

  8. Shi Y, Hua C, Li B, Fang X, Yao C, Zhang Y, Hu YS, Wang Z, Chen L, Zhao D. Highly ordered mesoporous crystalline MoSe2 material with efficient visible-light-driven photocatalytic activity and enhanced lithium storage performance. Adv Func Mater. 2013;23(14):1832.

    Article  CAS  Google Scholar 

  9. Liu B, Luo T, Mu G, Wang X, Chen D, Shen G. Rechargeable Mg-ion batteries based on WSe2 nanowire cathodes. ACS Nano. 2013;7(9):8051.

    Article  CAS  Google Scholar 

  10. Tan Y, Liu P, Chen L, Cong W, Ito Y, Han J, Guo X, Tang Z, Fujita T, Hirata A. Monolayer MoS2 films supported by 3D nanoporous metals for high-efficiency electrocatalytic hydrogen production. Adv Mater. 2014;26(47):8023.

    Article  CAS  Google Scholar 

  11. Wang L, Xu D, Jiang L, Gao J, Tang Z, Xu Y, Chen X, Zhang H. Transition metal dichalcogenides for sensing and oncotherapy: status, challenges, and perspective. Adv Func Mater. 2021;31(5):2004408.

    Article  CAS  Google Scholar 

  12. Yue Q, Shao Z, Chang S, Li J. Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field. Nanoscale Res Lett. 2013;8(1):425.

    Article  Google Scholar 

  13. Schedin F, Geim AK, Morozov SV, Hill EW, Blake P, Katsnelson MI, Novoselov KS. Detection of individual gas molecules adsorbed on graphene. Nat Mater. 2007;6(9):652.

    Article  CAS  Google Scholar 

  14. Shokri A, Salami N. Gas sensor based on MoS2 monolayer. Sens Actuators, B Chem. 2016;236:378.

    Article  CAS  Google Scholar 

  15. Yoon J, Lesne E, Sklarek K, Sheckelton J, Pasco C, Parkin SS, McQueen TM, Ali MN. Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb3Cl8. J Phys: Condensed Matter, 2020;32(30):304004.

  16. Strukov DB, Snider GS, Stewart DR, Williams RS. The missing memristor found. Nature, 2008;453(7191):80.

  17. Jiang J, Liang Q, Meng R, Yang Q, Tan C, Sun X, Chen X. Exploration of new ferromagnetic, semiconducting and biocompatible Nb3X8 (X = Cl, Br or I) monolayers with considerable visible and infrared light absorption. Nanoscale. 2017;9(9):2992.

    Article  CAS  Google Scholar 

  18. Haraguchi Y, Michioka C, Ishikawa M, Nakano Y, Yamochi H, Ueda H, Yoshimura K. Magnetic-nonmagnetic phase transition with interlayer charge disproportionation of Nb3 trimers in the cluster compound Nb3Cl8. Inorg Chem. 2017;56(6):3483.

    Article  CAS  Google Scholar 

  19. Barkan M. Digital data (multi-bit) storage with discrete analog memory cells. U.S. Patent 6,467,062. 2002-10-15.

  20. Castellanos-Gomez A, Buscema M, Molenaar R, Singh V, Janssen L, Van Der Zant HS, Steele GA. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Materials. 2014;1(1): 011002.

  21. Manzeli S, Ovchinnikov D, Pasquier D, Yazyev OV, Kis A. 2D transition metal dichalcogenides. Nat Rev Mater. 2017;2(8):17033.

    Article  CAS  Google Scholar 

  22. Di Bartolomeo A, Genovese L, Giubileo F, Iemmo L, Luongo G, Foller T, Schleberger M. Hysteresis in the transfer characteristics of MoS2 transistors. 2D Materials, 2017;5(1): 015014.

  23. Di Bartolomeo A, Giubileo F, Santandrea S, Romeo F, Citro R, Schroeder T, Lupina G. Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors. Nanotechnology, 2011;22(27): 275702.

  24. Cho K, Park W, Park J, Jeong H, Jang J, Kim TY, Hong WK, Hong S, Lee T. Electric stress-induced threshold voltage instability of multilayer MoS2 field effect transistors. ACS Nano. 2013;7(9):7751.

    Article  CAS  Google Scholar 

  25. Joshi NV. Photoconductivity: art, science, and technology. 1st ed. Boca Raton: CRC; 1990. 1.

    Google Scholar 

  26. Ho Y, Huang GM, Li P. Nonvolatile memristor memory: device characteristics and design implications, Proceedings of the 2009 International Conference on Computer-Aided Design, San Jose, CA, USA. IEEE, 2009. 485.

  27. Wang Y, He Z, Zhang J, Liu H, Lai X, Liu B, Chen Y, Wang F, Zhang L. UV illumination enhanced desorption of oxygen molecules from monolayer MoS2 surface. Nano Res. 2020;13(2):358.

    Article  CAS  Google Scholar 

  28. Arnold AJ, Razavieh A, Nasr JR, Schulman DS, Eichfeld CM, Das S. Mimicking neurotransmitter release in chemical synapses via hysteresis engineering in MoS2 transistors. ACS Nano. 2017;11(3):3110.

    Article  CAS  Google Scholar 

  29. Jiang J, Zheng Z, Guo J. Tuning the hysteresis voltage in 2D multilayer MoS2 FETs. Physica B. 2016;498:76.

    Article  CAS  Google Scholar 

  30. Wang Y, Lai X, Liu B, Chen Y, Lu Y, Wang F, Zhang L. UV-induced desorption of oxygen at the TiO2 surface for highly sensitive room temperature O2 sensing. J Alloy Compd. 2019;793:583.

    Article  CAS  Google Scholar 

  31. Okhonin S, Carman E, Jones ME. Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same. U.S. Patent 7,542,345. 2009-6-2.

  32. Liang Q, Gou J, Zhang Q, Zhang W, Wee ATS. Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides. Nano Res. 2020;13(12):3439.

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 62074025 and 52002051), the Applied Basic Research Program of Sichuan Province (No. 2020ZYD014), Sichuan Province Key Laboratory of Display Science and Technology, Postdoctoral Innovative Talent Supporting Program (No. BX20190060), China Postdoctoral Science Foundation (No. 2019M663463) and the Fundamental Research Funds for the Central Universities, SCUT (No. ZYGX2020J009).

Author information

Authors and Affiliations

  1. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China

    Jian-Gang Chen, Gui-Ming Cao, Qing Liu, Peng Meng & Fu-Cai Liu

  2. School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore

    Zheng Liu

Authors
  1. Jian-Gang Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Gui-Ming Cao
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Qing Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Peng Meng
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Zheng Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Fu-Cai Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Zheng Liu or Fu-Cai Liu.

Supplementary Information

Below is the link to the electronic supplementary material.

Supplementary file1 (DOC 3123 kb)

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Chen, JG., Cao, GM., Liu, Q. et al. Two-dimensional Nb3Cl8 memristor based on desorption and adsorption of O2 molecules. Rare Met. 41, 325–332 (2022). https://doi.org/10.1007/s12598-021-01794-1

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12598-021-01794-1

Search

Navigation