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Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells

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Abstract

This work first introduced Si quantum dots (QDs) for QD-sensitized solar cells (QDSCs). However, the particle size of Si QDs, which had visible light absorption, was relatively large. The paint-type Si QDSC was proposed in this work because Si QDs could not penetrate into nano-porous TiO2 network. Si QDs were synthesized by multi-hollow plasma discharge CVD and mixed with TiO2 paste. For better performance, thickness of Si-TiO2 layer was varied by coating times and Si-TiO2 films were optically and electrically analyzed. As a result, 6 times screen printed Si-TiO2 film had the best performance with the smallest internal impedance and the highest photon to current efficiency.

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Authors and Affiliations

  1. Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, Japan, 819-0395

    Hyunwoong Seo, Daiki Ichida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga & Masaharu Shiratani

  2. Center of Plasma Nano-interface Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, Japan, 819-0395

    Hyunwoong Seo & Masaharu Shiratani

  3. Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Japan, 567-0047

    Giichiro Uchida

Authors
  1. Hyunwoong Seo
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  2. Daiki Ichida
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  3. Giichiro Uchida
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  4. Kunihiro Kamataki
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  5. Naho Itagaki
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  6. Kazunori Koga
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  7. Masaharu Shiratani
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Correspondence to Hyunwoong Seo.

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Seo, H., Ichida, D., Uchida, G. et al. Analysis on the photovoltaic property of Si quantum dot-sensitized solar cells. Int. J. Precis. Eng. Manuf. 15, 339–343 (2014). https://doi.org/10.1007/s12541-014-0343-8

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  • DOI: https://doi.org/10.1007/s12541-014-0343-8

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