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Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films

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Abstract

Ferroelectric memristors, as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era, have the comprehensive function of simulating brain storage and calculation. However, due to the high dielectric loss of traditional ferroelectric materials, the durability of ferroelectric memristors and Si based integration have a great challenge. Here, we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO3(BTO)-CeO2 films. The BTO-CeO2 memristors exhibit a stable resistance switching behavior at a high temperature of 100 °C due to higher Curie temperatures of BTO-CeO2 films with in-plane compressive strain. And the endurance of the device can reach the order of magnitude of 1 × 106 times. More importantly, the device has excellent functions for simulating artificial synaptic behavior, including excitatory post-synaptic current, paired-pulse facilitation, paired-pulse depression, spike-time-dependent plasticity, and short and long-term plasticity. Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model, in which recognition accuracy of digital can reach 86.78% after 20 training iterations. These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.

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Acknowledgements

This work was financially supported by the National key R&D plan “nano frontier” key special project (Grant NO. 2021YFA1200502), Cultivation projects of national major R&D project (Grant No. 92164109), National Natural Science Foundation of China (Grant NO. 61874158, 62004056 and 62104058), Special project of strategic leading science and technology of Chinese Academy of Sciences (Grant No. XDB44000000-7), Hebei Basic Research Special Key Project (Grant No. F2021201045), the Support Program for the Top Young Talents of Hebei Province (Grant No. 70280011807), the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (Grant No. SLRC2019018), Interdisciplinary Research Program of Natural Science of Hebei University (DXK202101). Institute of Life Sciences and Green Development (521100311), Natural Science Foundation of Hebei Province (NO. F2022201054, F2021201022), Outstanding young scientific research and innovation team of Hebei University (Grant No. 605020521001), Special support funds for national high level talents (Grant No. 041500120001), Advanced Talents Incubation Program of the Hebei University (Grant No. 521000981426, 521100221071, 521000981363), Funded by Science and Technology Project of Hebei Education Department (Grant No. QN2020178, QN2021026).

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  1. Xiaobing Yan and Hongwei Yan contributed equally to this work.

Authors and Affiliations

  1. Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electronic and Information Engineering, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China

    Xiaobing Yan, Hongwei Yan, Gongjie Liu, Jianhui Zhao, Zhen Zhao, Hong Wang, Haidong He, Mengmeng Hao, Zhaohua Li, Lei Wang, Wei Wang, Zixuan Jian & Jiaxin Li

  2. Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore, Singapore

    Jingsheng Chen

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  1. Xiaobing Yan
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Correspondence to Xiaobing Yan, Jianhui Zhao or Jingsheng Chen.

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Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films

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Yan, X., Yan, H., Liu, G. et al. Silicon-based epitaxial ferroelectric memristor for high temperature operation in self-assembled vertically aligned BaTiO3-CeO2 films. Nano Res. 15, 9654–9662 (2022). https://doi.org/10.1007/s12274-022-4604-z

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