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Monolayer MoS2 epitaxy

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Abstract

As an emerging two-dimensional (2D) semiconductor material, monolayer MoS2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS2 monolayers. Here, we review the epitaxial growth of monolayer MoS2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.

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Acknowledgement

This work was supported by the National Natural Science Foundation of China (Nos. 11834017 and 61888102), the National Key Research and Development Program of China (No. 2016YFA0300904), the Key Research Program of Frontier Sciences of CAS (No. QYZDB-SSW-SLH004), and the Strategic Priority Research Program of CAS (Nos. XDB30302000 and XDB33010300).

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  1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Zheng Wei, Qinqin Wang, Lu Li, Rong Yang & Guangyu Zhang

  2. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China

    Zheng Wei, Qinqin Wang, Lu Li, Rong Yang & Guangyu Zhang

  3. Songshan Lake Materials Laboratory, Dongguan, 523808, China

    Rong Yang & Guangyu Zhang

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  1. Zheng Wei
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Correspondence to Guangyu Zhang.

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Wei, Z., Wang, Q., Li, L. et al. Monolayer MoS2 epitaxy. Nano Res. 14, 1598–1608 (2021). https://doi.org/10.1007/s12274-020-3019-y

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