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Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics

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Abstract

Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for batterypowered flexible electronic systems.

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Acknowledgements

This research was supported by the Global Frontier Center for Advanced Soft Electronics (No. 2011-0031640), the Creative Research Program of the ETRI (No. 15ZE1110), Wearable Platform Materials Technology Center (WMC) funded by the National Research Foundation of Korea (NRF) Grant of the Korean Government (MSIP) (No. 2016R1A5A1009926), and Samsung Research Funding Center of Samsung Electronics (No. SRFC-MA1402-04).

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Authors and Affiliations

  1. School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea

    Byung Chul Jang, Sang Yoon Yang & Sung-Yool Choi

  2. Department of Chemical and Biomolecular Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea

    Hyejeong Seong, Junhwan Choi & Sung Gap Im

  3. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea

    Sung Kyu Kim

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  1. Byung Chul Jang
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  7. Sung-Yool Choi
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Correspondence to Sung-Yool Choi.

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Jang, B.C., Yang, S.Y., Seong, H. et al. Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics. Nano Res. 10, 2459–2470 (2017). https://doi.org/10.1007/s12274-017-1449-y

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