Abstract
Electronic properties of stanene, the Sn counterpart of graphene are theoretically studied using first-principles simulations. The topological to trivial insulating phase transition induced by an out-of-plane electric field or by quantum confinement effects is predicted. The results highlight the potential to use stanene nanoribbons in gate-voltage controlled dissipationless spin-based devices and are used to set the minimal nanoribbon width for such devices, which is typically approximately 5 nm.
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Houssa, M., van den Broek, B., Iordanidou, K. et al. Topological to trivial insulating phase transition in stanene. Nano Res. 9, 774–778 (2016). https://doi.org/10.1007/s12274-015-0956-y
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DOI: https://doi.org/10.1007/s12274-015-0956-y