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Transforming bilayer MoS2 into single-layer with strong photoluminescence using UV-ozone oxidation

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Abstract

The use of single-layer MoS2 in light emitting devices requires innovative methods to enhance its low photoluminescence (PL) quantum yield. In this work, we report that single-layer MoS2 with a strong PL can be prepared by oxidizing bilayer MoS2 using UV-ozone oxidation. We show that as compared to mechanically-exfoliated single-layer MoS2, the PL intensity of the single-layer MoS2 prepared by UV-ozone oxidation is enhanced by 20–30 times. We demonstrate that the PL intensity of both neutral excitons and trions (charged excitons) can be greatly enhanced in the oxidized MoS2 samples. These results provide novel insights into the PL enhancement of single-layer MoS2.

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References

  1. Tonndorf, P.; Schmidt, R.; Böttger, P.; Zhang, X.; Börner, J.; Liebig, A.; Albrecht, M.; Kloc, C.; Gordan, O.; Zahn, D. R. T. et al. Photoluminescence emission and raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 2013, 21, 4908–4916.

    Article  Google Scholar 

  2. Kam, K. K.; Parkinson, B. A. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides. J Phys. Chem. 1982, 86, 463–467.

    Article  Google Scholar 

  3. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.

    Article  Google Scholar 

  4. Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. Acs Nano 2014, 8, 1102–1120.

    Article  Google Scholar 

  5. Yin, Z. Y.; Li, H.; Li, H.; Jiang, L.; Shi, Y. M.; Sun, Y. H.; Lu, G.; Zhang, Q.; Chen, X. D.; Zhang, H. Single-layer MoS2 phototransistors. Acs Nano 2012, 6, 74–80.

    Article  Google Scholar 

  6. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotech. 2011, 6, 147–150.

    Article  Google Scholar 

  7. Sanchez-Lopez, O.; Llado, E. A.; Koman, V.; Morral, A. F.; Radenovic, A.; Kis, A. Light generation and harvesting in a van der waals heterostructure. Acs Nano 2014, 8, 3042–3048.

    Article  Google Scholar 

  8. Lee, G.-H.; Yu, Y.-J.; Cui, X.; Petrone, N.; Lee, C.-H.; Choi, M. S.; Lee, D.-Y.; Lee, C.; Yoo, W. J.; Watanabe, K. et al. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures. Acs Nano 2013, 7, 7931–7936.

    Article  Google Scholar 

  9. Sundaram, R. S.; Engel, M.; Lombardo, A.; Krupke, R.; Ferrari, A. C.; Avouris, P.; Steiner, M. Electroluminescence in single layer MoS2. Nano Lett. 2013, 13, 1416–1421.

    Article  Google Scholar 

  10. Mak, K. F.; He, K. L.; Shan, J.; Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 2012, 7, 494–498.

    Article  Google Scholar 

  11. Cao, T.; Wang, G.; Han, W. P.; Ye, H. Q.; Zhu, C. R.; Shi, J. R.; Niu, Q.; Tan, P. H.; Wang, E. G.; Liu, B. L. et al. Valleyselective circular dichroism of monolayer molybdenum disulphide. Nat. Commun. 2012, 3, 887.

    Article  Google Scholar 

  12. Zeng, H. L.; Dai, J. F.; Yao, W.; Xiao, D.; Cui, X. D. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 2012, 7, 490–493.

    Article  Google Scholar 

  13. Zhu, H. M.; Lin, C. C.; Luo, W. Q.; Shu, S. T.; Liu, Z. G.; Liu, Y. S.; Kong, J. T.; Ma, E.; Cao, Y. G.; Liu, R. S. et al. Highly efficient non-rare-earth red emitting phosphor for warm white light-emitting diodes. Nat. Commun. 2014, 5, 4312.

    Google Scholar 

  14. Sobhani, A.; Lauchner, A.; Najmaei, S.; Ayala-Orozco, C.; Wen, F.; Lou, J.; Halas, N. J. Enhancing the photocurrent and photoluminescence of single crystal monolayer MoS2 with resonant plasmonic nanoshells. Appl. Phys. Lett. 2014, 104, 031112.

    Article  Google Scholar 

  15. Nan, H. Y.; Wang, Z. L.; Wang, W. H.; Liang, Z.; Lu, Y.; Chen, Q.; He, D. W.; Tan, P. H.; Miao, F.; Wang, X. R. et al. Strong photoluminescence enhancement of MoS2 through defect engineering and oxygen bonding. ACS Nano 2014, 8, 5738–5745.

    Article  Google Scholar 

  16. Tongay, S.; Zhou, J.; Ataca, C.; Liu, J.; Kang, J. S.; Matthews, T. S.; You, L.; Li, J. B.; Grossman, J. C.; Wu, J. Q. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett. 2013, 13, 2831–2836.

    Article  Google Scholar 

  17. Mouri, S.; Miyauchi, Y.; Matsuda, K. Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett. 2013, 13, 5944–5948.

    Article  Google Scholar 

  18. Splendiani, A.; Sun, L.; Zhang, Y. B.; Li, T. S.; Kim, J.; Chim, C.-Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271–1275.

    Article  Google Scholar 

  19. Molina-Sánchez, A.; Wirtz, L. Phonons in single-layer and few-layer MoS2 and WS2. Phys. Rev. B 2011, 84, 155413.

    Article  Google Scholar 

  20. Buscema, M.; Steele, A. G.; van der Zant, H. S. J.; Castellanos-Gomez, A. The effect of the substrate on the raman and photoluminescence emission of single-layer MoS2. Nano Res. 2014, 7, 561–571.

    Article  Google Scholar 

  21. Yamamoto, M.; Einstein, T. L.; Fuhrer, M. S.; Cullen, W. G. Anisotropic etching of atomically thin MoS2. J Phys. Chem. C 2013, 117, 25643–25649.

    Article  Google Scholar 

  22. Castellanos-Gomez, A.; Barkelid, M.; Goossens, A. M.; Calado, V. E.; van der Zant, H. S. J.; Steele, G. A. Laserthinning of MoS2: On demand generation of a single-layer semiconductor. Nano Lett. 2012, 12, 3187–3192.

    Article  Google Scholar 

  23. Mak, K. F.; He, K. L.; Lee, C.; Lee, G. H.; Hone, J.; Heinz, T. F.; Shan, J. Tightly bound trions in monolayer MoS2. Nat. Mater. 2013, 12, 207–211.

    Article  Google Scholar 

  24. Zhou, W.; Zou, X. L.; Najmaei, S.; Liu, Z.; Shi, Y. M.; Kong, J.; Lou, J.; Ajayan, P. M.; Yakobson, B. I.; Idrobo, J.C. Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 2013, 13, 2615–2622.

    Article  Google Scholar 

  25. Sercombe, D.; Schwarz, S.; Del Pozo-Zamudio, O.; Liu, F.; Robinson, B. J.; Chekhovich, E. A.; Tartakovskii, I. I.; Kolosov, O.; Tartakovskii, A. I. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. Sci. Rep. 2013, 3, 3489.

    Article  Google Scholar 

  26. Lide, D. R. Handbook of Chemistry and Physics, 90th ed.; CRC Press: Boca Raton, Florida, 2010.

    Google Scholar 

  27. Qiu, H.; Xu, T.; Wang, Z. L.; Ren, W.; Nan, H. Y.; Ni, Z. H.; Chen, Q.; Yuan, S. J.; Miao, F.; Song, F. Q. et al. Hopping transport through defect-induced localized states in molybdenum disulphide. Nat. Commun. 2013, 4, 2642.

    Google Scholar 

  28. Su, W. T.; Dou, H. L.; Huo, D. X.; Dai, N.; Yang, L. Enhancing photoluminescence of trion in single-layer MoS2 using p-type aromatic molecules. Chem. Phys. Lett. 2015, 635, 40–44.

    Article  Google Scholar 

  29. García-Vidal, F. J.; Pendry, J. B. Collective theory for surface enhanced Raman scattering. Phys. Rev. Lett. 1996, 77, 1163–1166.

    Article  Google Scholar 

  30. Smith, E.; Dent, D. Modern Raman Spectroscopy: A Practical Approach; Wiley: Chichester, 2005.

    Google Scholar 

  31. Azcatl, A.; McDonnell, S.; Santosh, K. C.; Peng, X.; Dong, H.; Qin, X. Y.; Addou, R.; Mordi, G. I.; Lu, N.; Kim, J. et al. MoS2 functionalization for ultra-thin atomic layer deposited dielectrics. Appl. Phys. Lett. 2014, 104, 111601.

    Article  Google Scholar 

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Authors and Affiliations

  1. Institute of Materials Physics, Hangzhou Dianzi University, Hangzhou, 310018, China

    Weitao Su

  2. Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China

    Weitao Su & Ning Dai

  3. National Physical Laboratory, Hampton Road, Teddington, Middlesex, TW11 0LW, UK

    Weitao Su, Naresh Kumar, Steve J. Spencer & Debdulal Roy

Authors
  1. Weitao Su
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  2. Naresh Kumar
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  3. Steve J. Spencer
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  4. Ning Dai
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  5. Debdulal Roy
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Correspondence to Weitao Su or Debdulal Roy.

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Su, W., Kumar, N., Spencer, S.J. et al. Transforming bilayer MoS2 into single-layer with strong photoluminescence using UV-ozone oxidation. Nano Res. 8, 3878–3886 (2015). https://doi.org/10.1007/s12274-015-0887-7

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  • DOI: https://doi.org/10.1007/s12274-015-0887-7

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