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Prediction of a large-gap quantum-spin-Hall insulator: Diamond-like GaBi bilayer

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Abstract

A quantum-spin-Hall (QSH) state was achieved experimentally, albeit at a low critical temperature because of the narrow band gap of the bulk material. Twodimensional topological insulators are critically important for realizing novel topological applications. Using density functional theory (DFT), we demonstrated that hydrogenated GaBi bilayers (HGaBi) form a stable topological insulator with a large nontrivial band gap of 0.320 eV, based on the state-of-the-art hybrid functional method, which is implementable for achieving QSH states at room temperature. The nontrivial topological property of the HGaBi lattice can also be confirmed from the appearance of gapless edge states in the nanoribbon structure. Our results provide a versatile platform for hosting nontrivial topological states usable for important nanoelectronic device applications.

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Authors and Affiliations

  1. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China

    Aizhu Wang & Mingwen Zhao

  2. School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD, 4001, Australia

    Aizhu Wang & Aijun Du

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  1. Aizhu Wang
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  2. Aijun Du
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  3. Mingwen Zhao
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Correspondence to Aijun Du or Mingwen Zhao.

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Wang, A., Du, A. & Zhao, M. Prediction of a large-gap quantum-spin-Hall insulator: Diamond-like GaBi bilayer. Nano Res. 8, 3823–3829 (2015). https://doi.org/10.1007/s12274-015-0882-z

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  • DOI: https://doi.org/10.1007/s12274-015-0882-z

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