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Fabrication of large area hexagonal boron nitride thin films for bendable capacitors

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Abstract

Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of ∼9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 μF/cm2, which is one order of magnitude higher than the calculated value.

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Authors and Affiliations

  1. Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

    Ning Guo, Jinquan Wei, Yi Jia, Huanhuan Sun, Xinming Li, Hongwei Zhu, Kunlin Wang & Dehai Wu

  2. Department of Physics, Tsinghua University, Beijing, 100084, China

    Yuhang Wang, Kehan Zhao, Xiaolan Shi & Liuwan Zhang

  3. Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China

    Anyuan Cao

Authors
  1. Ning Guo
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  2. Jinquan Wei
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  3. Yi Jia
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  4. Huanhuan Sun
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  5. Yuhang Wang
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  7. Xiaolan Shi
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  9. Xinming Li
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  10. Anyuan Cao
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  11. Hongwei Zhu
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  13. Dehai Wu
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Correspondence to Jinquan Wei.

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Guo, N., Wei, J., Jia, Y. et al. Fabrication of large area hexagonal boron nitride thin films for bendable capacitors. Nano Res. 6, 602–610 (2013). https://doi.org/10.1007/s12274-013-0336-4

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  • DOI: https://doi.org/10.1007/s12274-013-0336-4

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