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Raman scattering study of the phonon dispersion in twisted bilayer graphene

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Abstract

Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as a Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO’ phonons) are observed.

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Authors and Affiliations

  1. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Louvain-la-Neuve, 1348, Belgium

    Jessica Campos-Delgado & Jean-Pierre Raskin

  2. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil

    Luiz G. Cançado & Ado Jorio

  3. Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Xerém, RJ, 25250-020, Brazil

    Carlos A. Achete

Authors
  1. Jessica Campos-Delgado
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  2. Luiz G. Cançado
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  3. Carlos A. Achete
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  4. Ado Jorio
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  5. Jean-Pierre Raskin
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Correspondence to Jessica Campos-Delgado.

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Campos-Delgado, J., Cançado, L.G., Achete, C.A. et al. Raman scattering study of the phonon dispersion in twisted bilayer graphene. Nano Res. 6, 269–274 (2013). https://doi.org/10.1007/s12274-013-0304-z

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  • DOI: https://doi.org/10.1007/s12274-013-0304-z

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