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Simultaneous growth mechanisms for Cu-seeded InP nanowires

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Abstract

We report on epitaxial growth of InP nanowires (NWs) from Cu seed particles by metal-organic vapor phase epitaxy (MOVPE). Vertically-aligned straight nanowires can be achieved in a limited temperature range between 340 °C and 370 °C as reported earlier. In this paper we present the effect of the V/III ratio on nanowire morphology, growth rate, and particle configuration at a growth temperature of 350 °C. Two regimes can be observed in the investigated range of molar fractions. At high V/III ratios nanowires grow from a solid Cu2In particle. At low V/III ratios, nanowire growth from two particle types occurs simultaneously: Growth from solid Cu2In particles, and significantly faster growth from In-rich particles. We discuss a possible growth mechanism relying on a dynamic interplay between vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth. Our results bring us one step closer to the replacement of Au as seed particle material as well as towards a deeper understanding of particle-assisted nanowire growth.

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Authors and Affiliations

  1. Solid State Physics, Lund University, Box 118, SE-22100, Lund, Sweden

    Karla Hillerich, Kimberly A. Dick, Maria E. Messing, Knut Deppert & Jonas Johansson

  2. Polymer and Materials Chemistry, Lund University, Box 124, SE-22100, Lund, Sweden

    Kimberly A. Dick

Authors
  1. Karla Hillerich
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  2. Kimberly A. Dick
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  3. Maria E. Messing
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  4. Knut Deppert
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  5. Jonas Johansson
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Correspondence to Karla Hillerich or Jonas Johansson.

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Hillerich, K., Dick, K.A., Messing, M.E. et al. Simultaneous growth mechanisms for Cu-seeded InP nanowires. Nano Res. 5, 297–306 (2012). https://doi.org/10.1007/s12274-012-0210-9

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  • DOI: https://doi.org/10.1007/s12274-012-0210-9

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