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Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer

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Abstract

A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO-graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO-graphene materials have promising applications in future flexible electronic and optical devices.

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Authors and Affiliations

  1. Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi, 446-712, Republic of Korea

    Won Mook Choi, Hyo Sug Lee, Kihong Kim, Hyeon-Jin Shin, Seon-Mi Yoon & Jae-Young Choi

  2. School of Advanced Materials Science and Engineering, Sungkyunkwan (SKKU) Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea

    Kyung-Sik Shin & Sang-Woo Kim

  3. Department of Mechanical Engineering, Kyung Hee University, Yongin, Gyeonggi, 446-701, Republic of Korea

    Dukhyun Choi

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  1. Won Mook Choi
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  2. Kyung-Sik Shin
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  3. Hyo Sug Lee
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  4. Dukhyun Choi
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  5. Kihong Kim
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  6. Hyeon-Jin Shin
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  8. Jae-Young Choi
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  9. Sang-Woo Kim
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Correspondence to Jae-Young Choi or Sang-Woo Kim.

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These authors contributed equally to this work

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Choi, W.M., Shin, KS., Lee, H.S. et al. Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer. Nano Res. 4, 440–447 (2011). https://doi.org/10.1007/s12274-011-0100-6

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  • DOI: https://doi.org/10.1007/s12274-011-0100-6

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