Abstract
Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on γ-LiAlO2 (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [10\( \bar 1 \)0] direction with steeply tapering tips, and have triangular cross-sections with widths of 50–100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor-liquid-solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.
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Xia, Y.; Yang, P.; Sun, Y.; Wu, Y.; Mayers, B.; Gates, B.; Yin, Y.; Kim, F.; Yan, H. One-dimensional nanostructures: Synthesis, characterization, and applications. Adv. Mater. 2003, 15, 353–389.
Wang, J.; Gudiksen, M. S.; Duan, X.; Cui, Y.; Lieber, C. M. Highly polarized photoluminescence and photodetection from single indium phosphide nanowires. Science 2001, 293, 1455–1457.
Law, M; Sirbuly, D. J.; Johnson, J. C.; Goldberger, J.; Saykally, R. J.; Yang, P. Nanoribbon waveguides for subwavelength photonics integration. Science 2004, 305, 1269–1273.
Johnson, J. C.; Choi, H. -J.; Knutsen, K. P.; Schaller, R. D.; Yang, P.; Saykally, R. J. Single gallium nitride nanowire lasers. Nat. Mater. 2002, 1, 106–110.
Huang, Y.; Duan, X.; Cui, Y.; Lieber, C. M. Gallium nitride nanowire nanodevices. Nano Lett. 2002, 2, 101–104.
Gradečak, S.; Qian, F.; Li, Y.; Park, H. -G.; Lieber, C. M. GaN nanowire lasers with low lasing thresholds. Appl. Phys. Lett. 2005, 87, 173111.
Pauzauskic, P. J.; Sirbuly, D. J.; Yang, P. Semiconductor nanowire ring resonator laser. Phys. Rev. Lett. 2006, 96, 143903.
Kim, H. M.; Kang, T. W.; Chung, K. S. Nanoscale ultraviolet-light emitting diodes using wide-bandgap gallium nitride nanorods. Adv. Mater. 2003, 15, 567–569.
Liu, B. D.; Bando, Y.; Tang, C. C.; Xu, F. F.; Golberg, D. Quasi-aligned single-crystalline GaN nanowire arrays. Appl. Phys. Lett. 2005, 87, 073106.
Cheng, G. S.; Chen, S. H.; Zhu, X. G.; Mao, Y. Q.; Zhang, L. D. Highly ordered nanostructures of single-crystalline GaN nanowires in anodic alumina membranes. Mater. Sci. Eng. A 2000, 286, 165–168.
Kuykendall, T.; Pauzauskie, P; Lee, S.; Zhang, Y.; Goldberger, J.; Yang, P. Metalorganic chemical vapor deposition route to GaN nanowires with triangular cross sections. Nano Lett. 2003, 3, 1063–1066.
Kuykendall, T.; Pauzauskie, P. J.; Zhang, Y.; Goldberger, J.; Sirbuly, D.; Denlinger, J.; Yang, P. Crystallographic alignment of high-density gallium nitride nanowire arrays. Nat. Mater. 2004, 3, 524–528.
Wang, X.; Sun, X.; Fairchild, M.; Hersee, S. D. Fabrication of GaN nanowire arrays by confined epitaxy. Appl. Phys. Lett. 2006, 89, 233115
Kim, H. -M.; Kim, D. S.; Park, Y. S.; Kim, D. Y.; Kang, Chung, K. S. Growth of GaN nanorods by a hydride vapor phase epitaxy method. Adv. Mater. 2002, 14, 991–993.
Liu, B.; Yoshio, B.; Tang, C.; Xu, F.; Hu, J.; Dmitri, G. Needle-like bicrystalline GaN nanowires with excellent field emission properties. J. Phys. Chem. B 2005, 109, 17082–17085.
Meng, X. Q.; Shen, D. Z.; Zhang, J. Y.; Zhao, D. X.; Dong, L.; Lu, Y. M.; Liu, Y. C.; Fan, X. W. Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires. Nanotechnolgoy 2005, 16, 609–612.
Lai, W. H.; Hon, M. H.; Teoh, L. G.; Su, Y. H.; Shieh, J.; Chen, C. K. Field-emission performance of wormhole like mesoporous tungsten oxide nanowires. J. Electron. Mater. 2008, 37, 1082–1087.
Min, Z. G.; Roy, E.; Wen, L. H.; Min, L. W.; Min, H. S.; Zhang K. Y.; Quan, X. Z. Field emission from an array of free-standing metallic nanowires. Chin. Phys. Lett. 2002, 19, 1016–1018.
Simpkins, B. S.; Pehrsson, P. E.; Taheri, M. L.; Stroud, R. M. Diameter control of gallium nitride nanowires. J. Appl. Phys. 2007, 101, 094305.
Zhou, J.; Gong, L.; Deng, S. Z.; Chen, J.; She, J. C.; Xu, N. S.; Yang, R.; Wang, Z. L. Growth and field-emission property of tungsten oxide nanotip arrays. Appl. Phys. Lett. 2005, 87, 223108.
Chen, C. -H.; Huang, B. -R.; Lin, T. -S.; Chen, I. -C.; Hsu, C. -L. A new negative ion generator using ZnO nanowire array. J. Electrochem. Soc. 2006, 153, G894–G896.
Biswas, S.; Kar, S.; Ghoshal, T.; Ashok, V. D.; Chakrabarti, S.; Chaudhuri, S. Fabrication of GaN nanowires and nanoribbons by a catalyst assisted vapor liquid-solid-process. Mater. Res. Bull. 2007, 42, 428–436.
Chen, X.; Li, J.; Cao, Y.; Lan, Y.; Li, H.; He, M.; Wang, C.; Zhang, Z.; Qiao, Z. Straight and smooth GaN nanowires. Adv. Mater. 2000, 12, 1432–1434.
Colton, J. S.; Yu, P. Y.; Teo, K. L.; Perlin, P.; Weber, E. R.; Grzegory, I.; Uchida, K. Selective excitation of the yellow luminescence of GaN. Physica B 1999, 273–274, 75–79.
Jiang, D. -S.; Zhao, D. -G.; Yang, H. Optical analysis of dislocation-related physical processes in GaN-based epilayers. Phys. Status Solidi B 2007, 244, 2878–2891.
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He, X., Meng, G., Zhu, X. et al. Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition. Nano Res. 2, 321–326 (2009). https://doi.org/10.1007/s12274-009-9029-4
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DOI: https://doi.org/10.1007/s12274-009-9029-4