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Recent progresses on InGaN quantum dot light-emitting diodes

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Abstract

InGaN quantum dots (QDs) have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes (LEDs). In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.

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Authors and Affiliations

  1. Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China

    Lai Wang, Wenbin Lv, Zhibiao Hao & Yi Luo

Authors
  1. Lai Wang
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  2. Wenbin Lv
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  3. Zhibiao Hao
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  4. Yi Luo
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Corresponding author

Correspondence to Lai Wang.

Additional information

Lai Wang received his BS and PhD degrees from Tsinghua University in 2003 and 2008, respectively, all in Electronic Engineering. Associate Prof. Lai Wang’s current research interests include: MOCVD growth and characterization of III-nitride materials and their applications; carrier dynamics and efficiency droop in InGaN MQWs; InGaN QDs and light-emitting devices; detectors and sensors.

Wenbin Lv received his BS and MS degrees from Dalian Maritime University in 2002 and 2005, respectively, all in Communication Engineering. Now he is a PhD candidate in Department of Electronic Engineering, Tsinghua University. His current research interests include InGaN QDs and its light-emitting devices.

Zhibiao Hao received his BS and PhD degrees from Tsinghua University in 1996 and 2001, respectively, all in Electronic Engineering. Prof. Zhibiao Hao’s current research interests include: epitaxial growth of III-V compound semiconductors; nanostructure optoelectronic devices; wide band-gap electronic devices; fundamentals of microwave and optical wave.

Yi Luo received his BS from Tsinghua University and his MS and PhD degrees from University of Tokyo in 1983, 1987 and 1990, respectively, all in Electronic Engineering. Prof. Yi Luo’s current research interests include: fabrication and package technologies of photonic integrated devices for fiber telecommunication and radio over fiber system; materials growth, device fabrication and optical system design for LED-based solid state lighting; novel photonic devices based on nanostructure; solar cell and solar thermal application technology.

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Wang, L., Lv, W., Hao, Z. et al. Recent progresses on InGaN quantum dot light-emitting diodes. Front. Optoelectron. 7, 293–299 (2014). https://doi.org/10.1007/s12200-014-0425-3

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  • DOI: https://doi.org/10.1007/s12200-014-0425-3

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