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Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra

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Abstract

Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examined. The capping of InGaN QDs with GaN was analyzed. Optimized InGaN quantum dots emitted in green spectra at room temperature.

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Authors and Affiliations

  1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, 2220 Campus Drive, Room 4051, Evanston, IL, 60208, USA

    C. Bayram & M. Razeghi

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  1. C. Bayram
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  2. M. Razeghi
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Correspondence to M. Razeghi.

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Bayram, C., Razeghi, M. Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra. Appl. Phys. A 96, 403–408 (2009). https://doi.org/10.1007/s00339-009-5186-2

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