Abstract
The electrocaloric effect is calculated for PMN-PT relaxor ferroelectric thin film near morphotropic phase boundary composition. Thin film of thickness, ∼240 nm, has been deposited using pulsed laser deposition technique on a highly (111) oriented platinized silicon substrate at 700°C and at 100 mtorr oxygen partial pressure. Prior to the deposition of PMN-PT, a template layer of LSCO of thickness, ∼60 nm, is deposited on the platinized silicon substrate to hinder the pyrochlore phase formation. The temperature dependent P-E loops were measured at 200 Hz triangular wave operating at the virtual ground mode. Maximum reversible adiabatic temperature change, ΔT = 31 K, was calculated at 140°C for an external applied voltage of 18 V.
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Saranya, D., Chaudhuri, A.R., Parui, J. et al. Electrocaloric effect of PMN-PT thin films near morphotropic phase boundary. Bull Mater Sci 32, 259–262 (2009). https://doi.org/10.1007/s12034-009-0039-3
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DOI: https://doi.org/10.1007/s12034-009-0039-3