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Effect of annealing temperature on the magnetoelectric properties of CoFe2O4/Pt/Pb(Zr0.52Ti0.48)O3 multilayer films

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Abstract

CoFe2O4(CoFO)/Pt/Pb(Zr0.52Ti0.48)O3 (PZT) multilayer films were grown on Pt/Ti/SiO2/Si substrates. A thin Pt layer was inserted between the ferrimagnetic and the ferroelectric layers in order to suppress diffusion at high temperatures and thereby to prevent possible interfacial reactions. The effect of annealing on the film’s microstructure and multiferroic properties was then investigated using thin film stacks heat-treated at temperatures ranging from 550 to 650 °C. The magnetoelectric coefficients were calculated from the magnetoelectric voltages measured using a magnetoelectric measurement system. The effect of annealing temperature on the magnetoelectric coupling in the CoFO/Pt/PZT multilayer thin film is discussed in detail.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 712-749, Korea

    You Jeong Eum, Sung-Ok Hwang, Chang Young Koo, Jai-Yeoul Lee & Hee Young Lee

  2. Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon, 641-831, Korea

    Jungho Ryu

  3. Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Osaka, 560-8531, Japan

    Jung Min Park

Authors
  1. You Jeong Eum
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  2. Sung-Ok Hwang
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  3. Chang Young Koo
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  4. Jai-Yeoul Lee
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  5. Hee Young Lee
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  6. Jungho Ryu
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  7. Jung Min Park
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Correspondence to Hee Young Lee.

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Eum, Y.J., Hwang, SO., Koo, C.Y. et al. Effect of annealing temperature on the magnetoelectric properties of CoFe2O4/Pt/Pb(Zr0.52Ti0.48)O3 multilayer films. Journal of the Korean Physical Society 65, 342–345 (2014). https://doi.org/10.3938/jkps.65.342

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  • DOI: https://doi.org/10.3938/jkps.65.342

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