Abstract
GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. In this paper, we review data on the radiation resistance of GaN-based transistors such as AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) to different types of ionizing radiation. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects are discussed. The carrier removal rates are a function of initial carrier concentration, dose and dose rate but not of hydrogen concentration in the nitride material grown by metal organic chemical vapor deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two-dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. Neutron irradiation created more extended damage regions and at high doses leads to Fermi level pinning, while 60Co γ-ray irradiation leads to much smaller changes in HEMT drain current relative to the other forms of radiation.
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D.C. Look, D.C. Reynolds, J.W. Hemsky, J.R. Sizelove, R.L. Jones, and R.J. Molnar, Phys. Rev. Lett. 79, 2273 (1997).
A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, A.V. Korulin, and S.J. Pearton, J. Vac. Sci. Technol. B 28, 608 (2010).
B.D. White, M. Bataiev, S.H. Gross, X. Hu, A. Karmarkar, D.M. Fleetwood, R.D. Schrimpf, W.J. Schaff, and L.J. Brillson, IEEE Trans. Nucl. Sci. 50, 1934 (2003).
A.P. Karmarkar, B. Jun, D.M. Fleetwood, D.D. Schrimpf, R.A. Weller, B.D. White, L.S. Brillson, and U.K. Mishra, IEEE Trans. Nucl. Sci. 51, 3801 (2004).
X. Hu, A. Karmarkar, J. Bongim, D.M. Fleetwood, R.D. Schrimpf, R.D. Geil, R.A. Weller, B.D. White, M. Bataiev, L.J. Brillson, and U.K. Mishra, IEEE Trans. Nucl. Sci. 50, 1791 (2003).
B. Luo, J.W. Johnson, F. Ren, K.K. Alums, C.R. Abernathy, S.J. Pearton, A.M. Dabiran, A.M. Wowchak, C.J. Polley, P.P. Chow, D. Shoenfeld, and A.G. Baca, Appl. Phys. Lett. 80, 604 (2002).
B. Luo, J. Kim, F. Ren, J.K. Gillespie, R.C. Fitch, J. Sewell, R. Dettmer, G.D. Via, A. Crespo, T.J. Jenkins, B.P. Gila, A.H. Onstine, K.K. Allums, C.R. Abernathy, S.J. Pearton, R. Dwidevi, T.N. Fogarty, and R. Wilkins, Appl. Phys. Lett. 82, 1428 (2003).
J. Grant, R. Bates, W. Cunningham, A. Blue, J. Melone, F. McEwan, J. Vaitkus, E. Gaubas, and V. O’Shea, Nucl. Instrum Method A 576, 60 (2007).
Y.S. Puzyrev, T. Roy, E.X. Zhang, D.M. Fleetwood, R.D. Schrimpf, and S.T. Pantelides, IEEE Trans. Nucl. Sci. 58, 2918 (2011).
C.F. Lo, L. Liu, T.S. Kang, F. Ren, C. Schwarz, E. Flitsiyan, L. Chernyak, H.Y. Kim, J. Kim, S.P. Yun, O. Laboutin, Y. Cao, J.W. Johnson, and S.J. Pearton, J. Vac. Sci. Technol. B 30, 031202 (2012).
A.Y. Polyakov, S.J. Pearton, P. Frenzer, F. Ren, L. Liu, and J. Kim, J. Mater. Chem. C 1, 877 (2013).
S.J. Pearton, R. Deist, F. Ren, L. Liu, A.Y. Polyakov, and J. Kim, J. Vac. Sci. Technol. A 31, 050801 (2013).
Z. Zhang, A.R. Arehart, E. Cinkilic, J. Chen, E.X. Zhang, D.M. Fleetwood, R.D. Schrimpf, B. McSkimming, J.S. Speck, and S.A. Ringel, Appl. Phys. Lett. 103, 042102 (2013).
Y. Berthlet, B. Guhel, H. Boudart, J.L. Gualous, M. Trolet, M. Piccione and C. Gaquiere, Electron. Lett. 48 (2012).
M.R. Hogsed, Y.K. Yeo, M. Ahoujja, M.-Y. Ryu, J.C. Petrosky, and R.L. Hengehold, Appl. Phys. Lett. 86, 261906 (2005).
S.A. Vitusevich, N. Klein, A.E. Belyaev, S.V. Danylyuk, M.V. Petrychuk, R.V. Konakova, A.M. Kurakin, A.E. Rengevich, AYu Avksentyev, B.A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh, and L.F. Eastman, Phys. Stat. Solidi A 195, 101 (2003).
A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Danilchenko, R.V. Konakova, and A.E. Belyaev, J. Appl. Phys. 103, 083707 (2008).
K.H. Chow, L. Vlasenko, P. Johannesen, C. Bozdog, G. Watkins, A. Usui, H. Sunakawa, C. Sasaoka, and M. Mizuta, Phys. Rev. B 69, 045207 (2004).
K. Saarinen, T. Suski, I. Grzegory, and D.C. Look, Phys. Rev. B 64, 233201 (2001).
H.Y. Xiao, F. Gao, X.T. Zu, and J. Weber, J. Appl. Phys. 105, 123527 (2009).
D.C. Look, G.C. Farlow, P.J. Drevinsky, D.F. Bliss, and J.R. Sizelove, Appl. Phys. Lett. 83, 3525 (2003).
H.J. von Bardeleben, J.L. Cantin, U. Gerstmann, A. Scholle, S. Greulich-Weber, E. Rauls, M. Landmann, W.G. Schmidt, A. Gentils, J. Botsoa, and M.F. Barthe, Phys. Rev. Lett. 109, 206402 (2012).
A. Sasikumar, A.R. Arehart, S. Martin-Horcajo, M.F. Romero, Y. Pei, D. Brown, F. Recht, M.A. di Forte-Poisson, F. Calle, M.J. Tadjer, S. Keller, S.P. DenBaars, U.K. Mishra, and S.A. Ringel, Appl. Phys. Lett. 103, 0335091 (2013).
T.J. Anderson, A.D. Koehler, J.D. Greenlee, B.D. Weaver, M.A. Mastro, J.K. Hite, C.R. Eddy, F.J. Kub, and K.D. Hobart, IEEE Electron Device Lett. 35, 826 (2014).
A.D. Koehler, T.J. Anderson, J.K. Hite, B.D. Weaver, M.J. Tadjer, J.D. Greenlee, P. Specht, M. Porter, T.R. Weatherford, K.D. Hobart, and F.J. Kub, Investigation of Proton-Irradiated AlGaN/GaN HEMTs on Sapphire, Si, and SiC Substrates 56th Electronic Materials Conference (Santa Barbara, CA, June 25–27, 2014).
A. Sasikumar, A. R. Arehart, S. W. Kaun, J. Chen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, J. S. Speck and S. A. Ringel, Proc. SPIE 8986, Gallium Nitride Materials and Devices IX 89861C, 1 (2014).
D.C. Look, Z.Q. Fang, and B. Claflin, J. Cryst. Growth 281, 143 (2005).
C.G. van de Walle and J. Neugebauer, J. Appl. Phys. 95, 3851 (2004).
M.A. Reschikov and H. Morkoc, J. Appl. Phys. 97, 061301 (2005).
K.H. Chow, G.D. Watkins, A. Usui, and M. Mizuta, Phys. Rev. Lett. 85, 2761 (2000).
B.S. Kang, S. Kim, F. Ren, J.W. Johnson, R. Therrien, P. Rajagopal, J. Roberts, E. Piner, K.J. Linthicum, S.N.G. Chu, K. Baik, B.P. Gila, C.R. Abernathy, and S.J. Pearton, Appl. Phys. Lett. 85, 2962 (2004).
R. Mehandru, B. Luo, J. Kim, F. Ren, B. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, and A. Crespo, Appl. Phys. Lett. 82, 2530 (2003).
Y.-S. Hwang, L. Liu, F. Ren, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, N.G. Kolin, V.M. Boiko, S.S. Vereyovkin, V. Ermakov, C.F. Lo, O.A. Laboutin, Yu Cao, J.W. Johnson, N.I. Kargin, R.V. Ryzhuk, and S.J. Pearton, J. Vac. Sci. Technol. B 31, 022206 (2013).
Y.-H. Hwang, S. Li, Y.-L. Hsieh, F. Ren, S.J. Pearton, E. Patrick, M.E. Law, and D.J. Smith, Appl. Phys. Lett. 104, 082106 (2014).
B.D. Weaver, P.A. Martin, J.B. Boos, and C.D. Cress, IEEE Trans. Nucl. Sci. 59, 3077 (2012).
T. Roy, E.X. Zhang, Y.S. Puzyrev, D.M. Fleetwood, R.D. Schrimpf, B.K. Choi, A.B. Hmelo, and S.T. Pantelides, IEEE Trans. Nucl. Sci. 57, 3060 (2010).
L. Selvaraj, T. Suzue, and T. Egawa, IEEE Electron Device Lett. 30, 587 (2009).
L. Bin and T. Palacios, IEEE Electron Device Lett. 31, 9 (2010).
M. Kanamura, T. Ohki, T. Kikkawa, K. Imanishi, T. Imada, A. Yamada, and N. Hara, IEEE Electron Device Lett. 31, 189 (2010).
H.-Y. Liu, B.-Y. Chou, W.-C. Hsu, C.-S. Lee, J.-K. Sheu, and C.-S. Ho, IEEE Trans. Electron Device 60, 213 (2013).
P.D. Ye, B. Yang, K. Ng, J. Bude, G. Wilk, S. Halder, and J. Hwang, Appl. Phys. Lett. 86, 063501 (2005).
A.Y. Polyakov, N. Smirnov, A. Govorkov, E. Kozhukhova, S.J. Pearton, F. Ren, L. Liu, J.W. Johnson, W. Lim, N. Kolin, S. Veryokin, and V.S. Ermakov, J. Vac. Sci. Technol. B 30, 061207 (2012).
S. Mukherjee, J. Chen, T. Roy, M. Silvestri, R.D. Schrimpf, D.M. Fleetwood, J. Singh, J.M. Hinckley, A. Paccagnella, and S.T. Pantelides, IEEE Trans. Nucl. Sci. 61, 1316 (2014).
J. Chen, Y.S. Puzyrev, C.X. Zhang, E.X. Zhang, M.W. McCurdy, D.M. Fleetwood, R.D. Schrimpf, S.T. Pantelides, S.W. Kaun, E.C. Kyle, and J.S. Speck, IEEE Trans. Nucl. Sci. 60, 4080 (2013).
T.P. Ma and P.V. Dressdorfer, eds., Ionizing Radiation in MOS Devices/Circuits (New York: Wiley, 1989).
F.B. McLean, IEEE Trans. Nucl. Sci. 29, 1651 (1980).
G.P. Summers, E.A. Burke, P. Shapiro, S.R. Messenger, and R.J. Waters, IEEE Trans. Nucl. Sci. 40, 1372 (1993).
B.R. Tuttle, 2010 IEEE Nuclear and Space Radiation Effects Conference, Denver, CO (July 2010).
C.F. Lo, C.Y. Chang, B.H. Chu, H.-Y. Ki, J. Kim, D.A. Cullen, L. Zhou, D.J. Smith, I.I. Kravchenko, S.J. Pearton, A. Dabiran, B. Cui, P.P. Chow, S. Jang, and F. Ren, J. Vac. Sci. Technol. B 28, L47 (2010).
K.K. Allums, M. Hlad, A.P. Gerger, B.P. Gila, C.R. Abernathy, S.J. Pearton, F. Ren, R. Dwivedi, T.N. Fogarty, and R. Wilkins, J. Electron. Mater. 36, 519 (2007).
Acknowledgements
The work is supported by an U.S. DOD HDTRA Grant No. 1-11-1-0020, monitored by Dr. James Reed.
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Pearton, S.J., Hwang, YS. & Ren, F. Radiation Effects in GaN-Based High Electron Mobility Transistors. JOM 67, 1601–1611 (2015). https://doi.org/10.1007/s11837-015-1359-y
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DOI: https://doi.org/10.1007/s11837-015-1359-y