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A thermally tunable terahertz bandpass filter with insulator-metal phase transition of VO2 thin film

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Abstract

A terahertz bandpass filter with the sandwich structure consisting of thermally tunable vanadium dioxide (VO2) thin film, silica substrate and subwavelength rectangular Cu hole arrays is designed and theoretically analyzed. The results show that the transmittance of the filter can be actively tuned by controlling the temperature of VO2, the narrow band terahertz (THz) waves with the transmittance from 85.2% to 10.5% can be well selected at the frequency of 1.25 THz when the temperature changes from 50 °C to 80 °C, and the maximum modulation depth of this terahertz bandpass filter can achieve 74.7%.

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Authors and Affiliations

  1. Institute of Modern Optics, Nankai University, Tianjin, 300071, China

    Wei Li  (李伟), Sheng-jiang Chang  (常胜江), Xiang-hui Wang  (王湘辉) & Lie Lin  (林列)

  2. School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin, 300387, China

    Jin-jun Bai  (白晋军)

Authors
  1. Wei Li  (李伟)
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  2. Sheng-jiang Chang  (常胜江)
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  3. Xiang-hui Wang  (王湘辉)
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  4. Lie Lin  (林列)
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  5. Jin-jun Bai  (白晋军)
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Corresponding author

Correspondence to Sheng-jiang Chang  (常胜江).

Additional information

This work has been supported by the National High Technology Research and Development Program of China (No.2011AA010205), the National Natural Science Foundation of China (Nos.61171027 and 10904076), and the Tianjin City High School Science & Technology Fund Planning Project (No. 20120706).

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Li, W., Chang, Sj., Wang, Xh. et al. A thermally tunable terahertz bandpass filter with insulator-metal phase transition of VO2 thin film. Optoelectron. Lett. 10, 180–183 (2014). https://doi.org/10.1007/s11801-014-3236-2

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  • DOI: https://doi.org/10.1007/s11801-014-3236-2

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