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Microstructure, Mechanical Properties and Residual Stress of Selective Laser Melted AlSi10Mg

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Abstract

AlSi10Mg processed by selective laser melting (SLM) is common in various industries because of its complex structure and high performance. The microstructure, residual stress and mechanical properties restrict its application, while they are affected by the scanning path type and preheating temperature. In this work, to investigate the properties of selective laser melted AlSi10Mg alloys and gain better performance results, the microstructure and mechanical tests are performed at several preheating temperatures based on the uniformity and chessboard scanning strategy. It is found that the selective laser melted AlSi10Mg parts fabricated in the chessboard scanning path have better mechanical properties than those fabricated in the uniformity scanning path. Furthermore, a higher preheating temperature can induce less residual stress due to the enhanced Al crystal faces. Finally, analyses of the microstructures, mechanical and residual stress provide a valuable suggestion that the combination of the range of preheating temperature and the scanning path can improve the performance of selective laser melted AlSi10Mg.

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Acknowledgments

The authors would like to acknowledge the support of Shanghai Sailing Program (No. 18YF1418400).

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Authors and Affiliations

  1. College of Mechanical Engineering, University of Shanghai for Science and Technology, No. 516 Jungong Road, Yangpu, Shanghai, 200093, China

    Miaoxian Guo, Yi Ye & Xiaohui Jiang

  2. Shanghai Aerospace Equipments Manufacturer, Shanghai, 200245, China

    Lianfeng Wang

  3. Shanghai Research Center of Complex Metal Parts by Additive Manufacturing, Shanghai, 200245, China

    Lianfeng Wang

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  1. Miaoxian Guo
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  2. Yi Ye
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  4. Lianfeng Wang
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Correspondence to Miaoxian Guo.

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Guo, M., Ye, Y., Jiang, X. et al. Microstructure, Mechanical Properties and Residual Stress of Selective Laser Melted AlSi10Mg. J. of Materi Eng and Perform 28, 6753–6760 (2019). https://doi.org/10.1007/s11665-019-04423-2

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  • DOI: https://doi.org/10.1007/s11665-019-04423-2

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