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Arsenic incorporation during MBE growth of HgCdTe

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Abstract

We discuss the equilibrium model of the amphoteric behavior of arsenic in HgCdTe and its applicability to material grown by molecular beam epitaxy. Suggestions are made on how to achieve active incorporation by manipulating the surface orientation, or by using precursors that provide steric hindrance.

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References

  1. K. Kosai and W.A. Radford, J. Vac. Sci. Technol. A 8, 1254 (1990).

    Article  CAS  Google Scholar 

  2. M. Brown and A.F.W. Willoughby, J. Cryst. Growth 59, 27 (1982).

    Article  CAS  Google Scholar 

  3. H.R. Vydyanath, R.C. Abbott and D.A. Nelson, J. Appl. Phys. 54, 1323 (1983).

    Article  CAS  Google Scholar 

  4. H.R. Vydyanath, J.A. Ellsworth and C.M. Devaney, J. Electron. Mater. 16, 13 (1987).

    CAS  Google Scholar 

  5. S. Sivananthan, P.S. Wijewarnauriya, F. Awariden, H.R. Vydyanath, M. Zandian, D.D. Edwall and J.M. Arias, J. Electron. Mater. 26, 621 (1997); M. Zandian, A.C. Chen, D.D. Edwall, J.G. Pasko and J.M. Arias, Appl. Phys. Lett. 71, 2815 (1997); P.S. Wijewarnasuriya and S. Sivananthan, Appl. Phys. Lett. 72, 1694 (1998).

    CAS  Google Scholar 

  6. H.R. Vydyanath, Semicond. Sci. Technol. 5, S213 (1990); H.R. Vydyanath, L.S. Lichtmann, S. Sivanathan, P.S. Wijewarnasuriya and J.P. Faurie, Semicond. Sci. Technol. 24, 625 (1995).

  7. M.A. Berding, A. Sher and M. van Schilfgaarde, J. Electron. Mater. 27, 605 (1998); M.A. Berding, A. Sher and M. van Schilfgaarde, J. Electron. Mater. 26, 624 (1997).

    Article  CAS  Google Scholar 

  8. M.A. Berding and A. Sher, Phys. Rev. B 58, 3853 (1998).

    Article  CAS  Google Scholar 

  9. M.A. Berding and A. Sher, (unpublished).

  10. J.P. Faurie, Prog. Crystal Growth and Charact. 29, 85 (1994).

    Article  CAS  Google Scholar 

  11. J.P. Gailliard, Revue Phys. Appl. 22, 457 (1987).

    CAS  Google Scholar 

  12. M.H. Kalisher, P.E. Herning and T. Tung, Prog. Cryst. Growth and Charact. 29, 41 (1994).

    Article  CAS  Google Scholar 

  13. We assume that the arsenic in that work was fully active at the 500°C mercury-saturated anneal reported there. Such full activation is plausible in light of later annealing studies on MBE material at elevated temperatures (see Ref. 6 above).

  14. N. Newman, J. Cryst. Growth 178, 102 (1997).

    Article  CAS  Google Scholar 

  15. J.Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic Press, CA, 1993).

    Google Scholar 

  16. M.A. Berding, A. Sher and M. van Schilfgaarde, J. Electron. Mater. 26, 625 (1997).

    CAS  Google Scholar 

  17. J.M. Arias, S.H. Shin, D.E. Cooper, M. Zandian, J.G. Pasko, E.R. Gertner, R.E. DeWames and J. Singh, J. Vac. Sci. Technol. A 8, 1025 (1990).

    Article  CAS  Google Scholar 

  18. R. Venkatasubramanian, D. Dorsey and K. Mahalingam, J. Cryst. Growth 175, 224 (1997).

    Article  Google Scholar 

  19. R. Korenstein, P. Hallock, B. MacLeod, W. Hoke and S. Oguz, J. Vac. Sci. Technol. A 8, 1039 (1990).

    Article  CAS  Google Scholar 

  20. I.K. Sou, P.S. Wijewarnasuriya, M. Boukerche and J.P. Faurie, Appl. Phys. Lett. 55, 954 (1989).

    Article  CAS  Google Scholar 

  21. O.K. Wu, G.S. Kamath, W.A. Radford, P.R. Bratt and E.A. Patten, J. Vac. Sci. Technol. A 8, 1034 (1990).

    Article  CAS  Google Scholar 

  22. L.H. Zhang, S.D. Pearson, W. Tong, B.K. Wagner, J.D. Benson and C.J. Summers, J. Electron. Mater. 27, 600 (1998).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Applied Physical Sciences Laboratory, SRI International, Menlo Park, CA

    M. A. Berding & A. Sher

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  1. M. A. Berding
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  2. A. Sher
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Berding, M.A., Sher, A. Arsenic incorporation during MBE growth of HgCdTe. J. Electron. Mater. 28, 799–803 (1999). https://doi.org/10.1007/s11664-999-0073-3

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  • DOI: https://doi.org/10.1007/s11664-999-0073-3

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