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Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance

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Abstract

The composition and temperature dependence (20K<T<380K) of the direct gap, E0, of a series of GaAs1−xNx/GaAs (0≤x≤0.0232) samples has been measured using contactless electroreflectance. Our results for the composition dependence of E0 are different in relation to a recent experiment [W.G. Bi and C.W Tu, Appl. Phys. Lett. 70, 1608 (1997)]. In contrast to previously reported results, we find that the temperature dependence of the direct gap is in fact dependent on N composition and that the parameters which describe the temperature dependence of the band gap lie between those of GaAs and GaN.

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Authors and Affiliations

  1. Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, 11210, Brooklyn, NY

    L. Malikova & Fred H. Pollak

  2. Graduate School and University Center of the City University of New York, 10036, New York, NY

    Fred H. Pollak

  3. Bellcore, Navesink Research Center, 07701-7040, Red Bank, NJ

    RAJ Bhat

Authors
  1. L. Malikova
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  2. Fred H. Pollak
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  3. RAJ Bhat
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Malikova, L., Pollak, F.H. & Bhat, R. Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance. J. Electron. Mater. 27, 484–487 (1998). https://doi.org/10.1007/s11664-998-0181-5

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  • DOI: https://doi.org/10.1007/s11664-998-0181-5

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