Abstract
The GaAsxSb1−x; alloys are particularly promising materials for near-infrared light-emitting diode and detector devices. The optical properties, such as the dielectric function, complex refractive index, and absorption coefficient, are needed to properly design and understand semiconductor devices. Here, we report a method to obtain the optical properties of GaAsxSb1−x for the energy range from 1.5 to 6 eV and for an As composition from 0 to 1 at arbitrary wavelengths and compositions. The parameterization of the dielectric function of GaAsxSb1−x for specific compositions at x = 0, 0.183, 0.397, 0.528, 0.8, and 1 were realized by using the dielectric function parametric model.
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Acknowledgments
This research was supported by a National Research Foundation of Korea (NRF) grant NRF-2019R1H1A2079786 funded by the Korea government and by grant KRISS-2019-GP2019-0019, Development of Industrial Measuring Equipment Technology, funded by the Korea Research Institute of Standards and Science.
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Kim, T.J., Le, V.L., Nguyen, H.T. et al. Parameterization of the Dielectric Function of GaAsSb Alloy Films. J. Korean Phys. Soc. 77, 840–844 (2020). https://doi.org/10.3938/jkps.77.840
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DOI: https://doi.org/10.3938/jkps.77.840