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Flexible Resistive Switching Memory with a Schottky Diode Function Based on a Zinc Oxide/Methylene Blue Heterojunction

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Abstract

For the commercialization of a resistive switching memory device, many researchers are designing different memory structures for a crossbar array. In the present work, we propose a flexible Schottky diode-based resistive memory device based on a zinc oxide (ZnO) and methylene blue (MB) heterojunction. The operating voltage of the proposed memory device is ±3 V, and high-resistance state (HRS) and low-resistance state (LRS) are 20.408 GΩ and 126.795 MΩ, respectively, and the Roff/Ron ratio is ∼ 160.97 at a voltage read of −0.30 V. It shows high retention and endurance performance for more than 500 cycles and 30 days, respectively, with bending capability up to 10 mm. The proposed device can be used in flexible and printed electronics for memory and storage purposes.

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Authors and Affiliations

  1. Department of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju, 63243, Republic of Korea

    Muhammad Umair Khan, Gul Hassan & Jinho Bae

  2. Centre for Advanced Electronics & Photovoltaic Engineering (CAEPE), International Islamic University, H-10, Islamabad, 44000, Pakistan

    Gul Hassan

Authors
  1. Muhammad Umair Khan
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  2. Gul Hassan
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  3. Jinho Bae
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Correspondence to Jinho Bae.

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Khan, M.U., Hassan, G. & Bae, J. Flexible Resistive Switching Memory with a Schottky Diode Function Based on a Zinc Oxide/Methylene Blue Heterojunction. J. Electron. Mater. 49, 4764–4772 (2020). https://doi.org/10.1007/s11664-020-08200-z

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  • DOI: https://doi.org/10.1007/s11664-020-08200-z

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