Abstract
Fin-type field-effect transistors (FinFETs) are emerging in the era of nanoscale, and now, these transistors are preferred over MOSFET for digital as well as analog applications. The aftereffects of device scaling can be neutralized by multi-gate devices. The use of FinFET in analog circuits is an essential field in research, and FinFET-based current mirrors necessitate hard efforts. In this paper, four different FinFET-based current mirrors are designed and analyzed. These configurations are analyzed in terms of input–output current characteristics, percentage error ratio, output current versus output voltage and mirroring accuracy. Additionally, output resistance is evaluated with respect to frequencies. These analyses may create new horizons in low-voltage portable analog circuit applications.
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Monika, Mittal, P. (2022). Performance Comparison of FinFET-Based Different Current Mirror Topologies. In: Dhawan, A., Tripathi, V.S., Arya, K.V., Naik, K. (eds) Recent Trends in Electronics and Communication. VCAS 2020. Lecture Notes in Electrical Engineering, vol 777. Springer, Singapore. https://doi.org/10.1007/978-981-16-2761-3_71
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DOI: https://doi.org/10.1007/978-981-16-2761-3_71
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