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Preparation of SiC/SiO2 Hard Core–Soft Shell Abrasive and Its CMP Behavior on Sapphire Substrate

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Abstract

Sapphire is the mainstream substrate material of light-emitting diode chips, but it is difficult to process due to its high hardness and good chemical stability. Currently, its processing technology is still not mature. In this work, one kind of silicon carbide/silicon oxide (SiC/SiO2) hard core–soft shell abrasive was described. The chemical mechanical polishing properties of SiC/SiO2 core–shell abrasives on sapphire wafers were investigated. The experimental results show that the surface of silicon carbide (SiC) coated with silicon oxide (SiO2) can significantly improve the polishing performance of the abrasives. Especially when the amount of SiO2 coating is 15 wt.%, the SiC/SiO2 core–shell abrasive has the highest polishing rate and the best surface roughness. The improvement in polishing performance is due to the fact that the SiO2 shell can reduce the hardness of the abrasives while increasing the reactivity of the abrasives with the sapphire wafer.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51475279, 51375291).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China

    Sanwei Dai & Hong Lei

  2. Research Center of Nano Science and Technology, Shanghai University, Shanghai, 200444, China

    Sanwei Dai, Hong Lei & Jifang Fu

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  1. Sanwei Dai
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  2. Hong Lei
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  3. Jifang Fu
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Correspondence to Hong Lei or Jifang Fu.

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Dai, S., Lei, H. & Fu, J. Preparation of SiC/SiO2 Hard Core–Soft Shell Abrasive and Its CMP Behavior on Sapphire Substrate. J. Electron. Mater. 49, 1301–1307 (2020). https://doi.org/10.1007/s11664-019-07683-9

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  • DOI: https://doi.org/10.1007/s11664-019-07683-9

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