Abstract
Cu-doped colloidal SiO2 composite abrasives were synthesized by seed-induced growth method. Time of flight secondary ion mass spectroscopy and scanning electron microscopy analyses show that element copper has been doped into colloidal SiO2, and the prepared Cu-doped colloidal SiO2 composite abrasives are all ideal spherical and have good dispersibility. Chemical mechanical polishing (CMP) performances of Cu-doped colloidal SiO2 composite abrasives on sapphire substrates were investigated using UNIPOL-1502 CMP equipment. Experimental results show that, the surface of sapphire polished by Cu-doped colloidal SiO2 composite abrasive exhibit lower surface roughness (Ra) and higher material removal rate (MRR) than that of pure colloidal SiO2 abrasive under the same testing conditions. Furthermore, the acting mechanism of Cu-doped colloidal SiO2 composite abrasive in sapphire CMP was analyzed by X-ray photoelectron spectroscopy, and analytical results show that element Cu in composite abrasives can react with sapphire substrates to form dialuminium copper tetraoxide (Al2CuO4) during CMP, which promotes the chemical effect in CMP and leads to the improvement of MRR.
Similar content being viewed by others
References
H.L. Zhu, L.A. Tessaroto, R. Sabia, V.A. Greenhut, M. Smith, D.E. Niesz, Appl. Surf. Sci. 236, 120–130 (2004)
T. Saitow, T. Hirayama, T. Yamamoto, Y. Ikuhara, J. Am. Ceram. Soc. 88(8), 2277–2285 (2005)
X.H. Niu, Y.L. Liu, B.M. Tan, L.Y. Han, J.X. Zhang, Trans. Nonferrous Metals Soc. 16, 732–734 (2006)
T. Takeuchi, H. Takeuchi, S. Sota, S. Sakai, H. Amano, I. Akasaki, Jpn. J. Appl. Phys. 36(2B), L177–L179 (1997)
W.X. Yan, Z.F. Zhang, X.H. Guo, W.L. Liu, Z.T. Song, ECS J. Solid State Sci. 4(3), P108–P111 (2015)
Z.G. Zhuo, H. Zhou, X.M. Xu, Y. Zang, Mach. Des. Manuf. 4, 249–251 (2013)
T. Hara, S. Balakumar, Thin Solid Films 462–463, 186–191 (2004)
H. Lei, J.P. Luo, Wear 257, 461–470 (2004)
M. Forsberg, Microelectron. Eng. 77, 319–326 (2005)
Z.F. Zhang, L. Hou, W.X. Yan, W.L. Liu, Z.T. Zhang, Lubr. Eng. 38, 88–91 (2013)
V.V. Rogov, N.D. Rublev, T.L. Krotenko, A.V. Troyan, J. Superhard Mater. 30(4), 273–275 (2008)
P.B. Zantye, A. Kumar, A.K. Sikder, Mater. Sci. Eng. R 45(3–6), 80–220 (2004)
H.L. Zhu, L.A. Tessaroto, R. Sabia, V.A. Greenhut, M. Smith, D.E. Niesz, Appl. Surf. Sci. 236, 120–130 (2004)
Z.F. Zhang, W.X. Yan, L. Zhang, W.L. Liu, Z.T. Song, Microelectron. Eng. 88, 3020–3023 (2011)
S.J. Zhou, S. Liu, Appl. Surf. Sci. 255, 9469–9473 (2009)
L.S. Bai, W. Xiong, X.F. Chu, Y.P. Dong, W.B. Zhang, Opt. Precis. Eng. 22(5), 1289–1295 (2014)
H.L. Zhu, D.E. Niesz, V.A. Greenhut, J. Mater. Res. 20(02), 504–520 (2005)
W. Xiong, X.F. Chu, Y.P. Dong, L. Bi, M.H. Ye, W.Q. Sun, J. Synth. Cryst. 42, 1064–1106 (2013)
X.K. Hu, Z.T. Song, Z.C. Pan, W.L. Liu, L.C. Wu, Appl. Surf. Sci. 255, 8230–8234 (2009)
Z.F. Zhang, W.L. Liu, Z.T. Song, X.K. Hu, J. Electrochem. Soc. 157(6), H688–H691 (2010)
Y.H. Zhao, B.M. Tan, X.H. Niu, J.L. Zhen, Q. Guo, Micronanoelectron. Technol. 51, 120–125 (2014)
X.H. Niu, T. Wu, X.H. Zhao, B.M. Tan, Y.L. Liu, Electrochem. Soc. Trans. 18(1), 435–440 (2009)
S. Armini, C.M. Whelan, M. Moinpour, K. Maex, ECS J. Electrochem. Soc. 155(6), H401–H406 (2008)
S. Armini, C.M. Whelan, M. Moinpour, K. Maex, Electrochem. Solid State 10(9), H243–H247 (2007)
H. Li, H. Lei, R.L. Chen, Thin Solid Films 520, 6174–6178 (2012)
H. Lei, P.Z. Zhang, Appl. Surf. Sci. 253, 8754–8761 (2007)
H. Lei, F.L. Chu, B.Q. Xiao, X.F. Tu, H. Xu, H.N. Qiu, Microelectron. Eng. 87, 1747–1750 (2010)
S.H. Lee, Z.Y. Lu, S.V. Babu, E. Matijevic, J. Mater. Res. 17(10), 2744–2749 (2002)
L. Zhang, H.B. Wang, Z.F. Zhang, F. Qin, W.L. Liu, Z.T. Song, Appl. Surf. Sci. 258, 1217–1224 (2011)
C.D. Wagner, D.E. Passoja, H.F. Hillery, T.G. Kinisky, H.A. Six, W.T. Jansen, J.A. Taylor, J. Vac. Sci. Technol. 21(4), 933–944 (1982)
J.R. Lindsay, H.J. Rose, W.E. Scoartz, P.H. Watts, K.A. Rayburn, Appl. Spectrosc. 27, 1–5 (1973)
G. Deroubaix, P. Marcus, Surf. Interface Anal. 18(1), 39–46 (1992)
P.R. Anderson, W.E. Swartz, Inorg. Chem. 13(9), 2293–2294 (1974)
B.R. Strohmeier, D.E. Leyden, R.S. Field, D.M. Hercules, J. Catal. 94(2), 514–530 (1985)
Acknowledgments
The work was supported by National Natural Science Foundation of China (Grant Nos. 51475279, 51375291). Research Fund for Doctoral Program of Higher Education of China (Grant No. 20123108110016).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Lei, H., Gu, Q. Preparation of Cu-doped colloidal SiO2 abrasives and their chemical mechanical polishing behavior on sapphire substrates. J Mater Sci: Mater Electron 26, 10194–10200 (2015). https://doi.org/10.1007/s10854-015-3708-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-015-3708-6