Abstract
Molecular beam epitaxial growth of HgCdTe on alternative substrates such as Si and GaAs has been under research for more than a decade. Since the widely used CdZnTe substrates for the growth of HgCdTe are expensive, produced in limited sizes, brittle and thermally mismatch to Si read out integrated circuits, alternative substrates are in focus. In this paper two growth parameters namely CdTe/Te flux ratio and in␣situ annealing temperature affecting the crystal quality are described. The obtained x-ray diffraction full width at half maximum ∼ 95 arcsec and surface roughness (∼ 0.72 nm) values are promising.
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Acknowledgments
We would like to thank Presidency of Defense Industries (SSB), Turkish Military of Defense and The Scientific and Technological Research Council of Turkey (TUBITAK) for their support of research and development activities in the field of infrared detectors.
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Sasmaz, E., Kaldirim, M., Eker, S.U. et al. Optimization of Growth Parameters for Molecular Beam Epitaxial Growth of (211)B CdTe Layers on GaAs Substrates. J. Electron. Mater. 48, 6069–6073 (2019). https://doi.org/10.1007/s11664-019-07556-1
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DOI: https://doi.org/10.1007/s11664-019-07556-1