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Investigating the Effect of Ag Content on Mechanical Properties of Sn-Ag-Cu Micro-BGA Joints

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Abstract

In order to evaluate the effect of Ag content on the mechanical property in micro-ball grid array (micro-BGA) solder joints, a shear test was carried out on Sn-3.0Ag-0.5Cu/Cu (wt.%) and Sn-4.0Ag-0.5Cu/Cu solder joints with a diameter of 90 μm. Corresponding microstructure before and after the shear test were investigated in this study. The shear test results demonstrated that the shear strength of Sn-4.0Ag-0.5Cu/Cu was greater than that of Sn-3.0Ag-0.5Cu/Cu. In Sn-4.0Ag-0.5Cu/Cu. The number of fine eutectic Ag3Sn particles in the solder matrix was higher, and the occurrence of plate-like Ag3Sn formation was much more frequent than in Sn-3.0Ag-0.5Cu/Cu. Moreover, by applying a fallback mode shear test and observing the fracture surface, broken plate-like Ag3Sn was found in the Sn-4.0Ag-0.5Cu/Cu joints with higher shear strength. These plate-like Ag3Sn acted as obstacles against shear force and enhanced the shear strength of joints. Therefore, both fine Ag3Sn precipitates and huge plate-like Ag3Sn improved the shear performance of micro-BGA joints. In addition, the shear behavior of 250 μm solder joints was also investigated and discussed, which was not identical to micro-BGA joints. The strengthening effect of plate-like Ag3Sn only occurred in micro-BGA joints, which had higher volume ratio of plate-like Ag3Sn in solder joints.

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Acknowledgments

This work was supported by the Ministry of Science and Technology, Taiwan under Grant Number 107-2221-E-007-090.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Tsing Hua University, No. 101 Sec. II, Kuang-Fu Rd., Hsinchu, 30013, Taiwan

    Hao Chen, Tzu-Ting Chou, Collin Fleshman & Jenq-Gong Duh

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  1. Hao Chen
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  2. Tzu-Ting Chou
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  3. Collin Fleshman
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  4. Jenq-Gong Duh
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Correspondence to Jenq-Gong Duh.

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Chen, H., Chou, TT., Fleshman, C. et al. Investigating the Effect of Ag Content on Mechanical Properties of Sn-Ag-Cu Micro-BGA Joints. J. Electron. Mater. 48, 6866–6871 (2019). https://doi.org/10.1007/s11664-019-07428-8

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  • DOI: https://doi.org/10.1007/s11664-019-07428-8

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