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Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

  • Topical Collection: 18th International Conference on II-VI Compounds
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Abstract

This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China

    Yifei Mao, Jijun Zhang, Jiahua Min, Xiaoyan Liang, Jian Huang, Ke Tang, Liwen Ling, Ming Li, Ying Zhang & Linjun Wang

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  1. Yifei Mao
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  2. Jijun Zhang
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  3. Jiahua Min
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  4. Xiaoyan Liang
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  5. Jian Huang
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  7. Liwen Ling
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  8. Ming Li
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  10. Linjun Wang
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Correspondence to Jijun Zhang.

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Mao, Y., Zhang, J., Min, J. et al. Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal. J. Electron. Mater. 47, 4239–4248 (2018). https://doi.org/10.1007/s11664-018-6117-9

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  • DOI: https://doi.org/10.1007/s11664-018-6117-9

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