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Effect of Post-annealing Processes on Filamentary-Based Resistive Switching Mechanism of Chromium Oxide Thin Films

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Abstract

The interrelation between microstructure of chromium oxide films (CrOx) and formation of silver (Ag) filament in Ag/CrOx/Pt devices has been investigated at various annealing temperatures. It is revealed that Cr2O3 phase is dominant at high annealing temperatures and different microstructures of the CrOx films exhibit different resistance switching characteristics. As-deposited CrOx films with amorphous structure show highly reliable and reproducible resistance switching due to an easy formation of thin Ag filaments. 300°C-annealed CrOx films with denser structure exhibit a fluctuating switching characteristics, relating to negative differential resistance (NDR) effect, in the first several tens of switching cycles, followed by a stable switching characteristics. On the contrary, the resistance switching is not observed in 500°C-annealed CrOx films due to presence of voids or pinholes created at high annealing temperature. The roles of NDR effect and voids/pinholes on resistance switching characteristics of CrOx thin films are also discussed.

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Authors and Affiliations

  1. Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam

    Ngoc Kim Pham, Kieu Hanh Thi Ta,  Van Hieu Le & Bach Thang Phan

  2. Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam

    Vinh Cao Tran & Bach Thang Phan

  3. Department of Mathematics and Physics, University of Information Technology, Vietnam National University, Ho Chi Minh City, Vietnam

    Bao Thu Le Nguyen

  4. Department of Nano-Physics, Gachon University, Seongnam-City, 461-701, Korea

    Heong Kyu Ju

  5. Center of Excellence on Alternative Energy, Research Development Institute, Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, 680 Nittayo, Mueang District, Sakon Nakhon, 74000, Thailand

    Tosawat Seetawan

  6. Center for Innovative Materials and Architectures (INOMAR), Vietnam National University, Ho Chi Minh City, Vietnam

    Bach Thang Phan

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  1. Ngoc Kim Pham
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  2. Kieu Hanh Thi Ta
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  3. Vinh Cao Tran
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  4. Van Hieu Le
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  5. Bao Thu Le Nguyen
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  8. Bach Thang Phan
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Correspondence to Ngoc Kim Pham.

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Pham, N.K., Ta, K.H.T., Tran, V.C. et al. Effect of Post-annealing Processes on Filamentary-Based Resistive Switching Mechanism of Chromium Oxide Thin Films. J. Electron. Mater. 46, 3285–3294 (2017). https://doi.org/10.1007/s11664-016-5263-1

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  • DOI: https://doi.org/10.1007/s11664-016-5263-1

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