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Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy

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Abstract

Reversible resistive switching of Cr2O3 films was studied by use of conductive atomic force microscopy. Resistive switching in Cr2O3 films occurs as a result of Ag filament paths formed during electrochemical redox reactions. A large memory density of 100 Tbit/sq. inch was achieved with a small filament diameter of 2.9 nm under the action of a compliance current of 10 nA. A fast switching speed of 10 ns, high scalability, and low set/reset currents suggest that Cr2O3-based resistive memory is suitable for nanoscale devices.

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References

  1. A. Beck, J.U. Bednorz, C. Gerber, Ch. Rossel, and D. Windmer, Appl. Phys. Lett. 77, 139 (2000).

    Article  Google Scholar 

  2. S.Q. Liu, N.J. Wii, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).

    Article  Google Scholar 

  3. Y. Watanabe, J.G. Bednorz, A. Bietsch, C. Gerber, D. Widmer, A. Beck, and S.J. Wind, Appl. Phys. Lett. 78, 3738 (2001).

    Article  Google Scholar 

  4. R. Waser and M. Aono, Nat. Mater. 6, 833 (2007).

    Article  Google Scholar 

  5. B.T. Phan and J. Lee, Appl. Phys. Lett. 93, 222906 (2008).

    Article  Google Scholar 

  6. B.T. Phan and J. Lee, Appl. Phys. Lett. 94, 232102 (2009).

    Article  Google Scholar 

  7. B.T. Phan, N.C. Kim, and J. Lee, J. Kor. Phys. Soc. 54, 873 (2009).

    Article  Google Scholar 

  8. B.T. Phan, T. Choi, A. Romanenko, and J. Lee, Solid-State Electronics. 75, 43 (2012).

    Article  Google Scholar 

  9. Y-C. Chen, C.F. Chen, C.T. Chen, J.Y. Yu, S. Wu, S.L. Lung, R. Liu, and C-Y. Lu, IEDM Tech. Dig. (2003).

  10. B.J. Choi, D.S. Jeong, S.K. Kim, S. Choi, J.H. Oh, C. Rohde, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005).

    Article  Google Scholar 

  11. K. Jung, H. Seo, Y. Kim, H. Im, J.P. Hong, J.W. Park, and J.K. Lee, Appl. Phys. Lett. 90, 052104 (2007).

    Article  Google Scholar 

  12. A. Chen, S. Haddad, Y.C. Wu, Z. Lan, T.N. Fang, and S. Kaza, Appl. Phys. Lett. 91, 123517 (2007).

    Article  Google Scholar 

  13. C.Y. Lin, C.Y. Wu, C. Hu, and T.Y. Tseng, J. Electrochem. Soc. 154, G189 (2007).

    Article  Google Scholar 

  14. T. Le, H.C.S. Tran, V.H. Le, T. Tran, C.V. Tran, T.T. Vo, M.C. Dang, S.S. Kim, J. Lee, and B.T. Phan, J. Korean Phys. Soc. 60, 1087 (2012).

    Article  Google Scholar 

  15. K.N. Pham, T.D. Nguyen, T.K.H. Ta, K.L.D. Thuy, V.H. Le, D.P. Pham, C.V. Tran, D. Mott, S. Maenosono, S.S. Kim, J. Lee, D.T. Pham, and B.T. Phan, Eur. Phys. J. Appl. Phys. 64, 30102 (2013).

    Article  Google Scholar 

  16. J.B. Park, K.P. Biju, S.J. Jung, W.T. Lee, J.M. Lee, S.H. Kim, S.S. Park, J.H. Shin, and H.S. Hwang, IEEE Electron Device Lett. 32, 476 (2011).

    Article  Google Scholar 

  17. N.K. Pham, D.T. Nguyen, B.T.T. Dao, K.T.H. Ta, V.C. Tran, V.H. Nguyen, S.S. Kim, S. Maenosono, and T.B. Phan, J. Electron. Mater. 43, 2747 (2014).

    Article  Google Scholar 

  18. T.B.T. Dao, K.N. Pham, Y.L. Cheng, S.S. Kim, and B.T. Phan, Curr. Appl. Phys. 14, 1707 (2014).

    Article  Google Scholar 

  19. J.W. Seo, Doctor Thesis, Transparent resistive random access memory for transparent electronics, Korean Advanced Institute of Science and Technology (2011).

  20. S.Z. Rahaman, S. Maikap, T.C. Tien, H.Y. Lee, W.S. Chen, F.T. Chen, M.J. Kao, and M.J. Tsai, Nanoscale Res. Lett. 7, 345 (2012).

    Article  Google Scholar 

  21. Q. Liu, J. Sun, H.B. Lv, S.B. Long, K.B. Yin, N. Wan, Y.T. Li, L.T. Sun, and M. Liu, Adv. Mater. 24, 1844 (2012).

    Article  Google Scholar 

  22. A. Prakash, S. Maikap, H.C. Chiu, T.C. Tien, and C.S. Lai, Nanoscale Res. Lett. 8, 288 (2013).

    Article  Google Scholar 

  23. A.A. Sharma, M. Noman, M. Abdelmoula, M. Skowronski, and J.A. Bain, Adv. Funct. Mater. 24, 5522 (2014).

    Article  Google Scholar 

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Authors and Affiliations

  1. Faculty of Materials Science, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam

    Kim Ngoc Pham, Trung Do Nguyen,  Van Hieu Le & Bach Thang Phan

  2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea

    Minsu Choi & Jaichan Lee

  3. Laboratory of Advanced Materials, University of Science, Vietnam National University, Ho Chi Minh City, Vietnam

    Cao Vinh Tran & Bach Thang Phan

  4. Hybrid Materials Research Center and Faculty/Institute of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea

    Taekjib Choi

Authors
  1. Kim Ngoc Pham
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  2. Minsu Choi
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  3. Cao Vinh Tran
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  4. Trung Do Nguyen
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  5. Van Hieu Le
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  6. Taekjib Choi
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  7. Jaichan Lee
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  8. Bach Thang Phan
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Correspondence to Bach Thang Phan.

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Pham, K.N., Choi, M., Tran, C.V. et al. Study of the Resistive Switching Effect in Chromium Oxide Thin Films by Use of Conductive Atomic Force Microscopy. J. Electron. Mater. 44, 3395–3400 (2015). https://doi.org/10.1007/s11664-015-3889-z

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  • DOI: https://doi.org/10.1007/s11664-015-3889-z

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