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Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

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Abstract

Zinc telluride (ZnTe) epilayers were grown on S-plane (\(10\bar{1}1\)) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously obtained for layers grown on c-plane (0001), m-plane (\(10\bar{1}0 \)) substrates, and r-plane (\(1\bar{1}02 \)). The crystallographic relationship between the (111) plane of the ZnTe layer and (0001) plane of the substrate was studied using x-ray diffraction pole figure measurements. It was confirmed that two kinds of {111} oriented domains were formed on the S-plane substrate, and the dominant domain was (111)-oriented. Layers grown on S-plane substrate and on m-plane substrate exhibited the same epitaxial relationship, while the epitaxial relationship of the layer grown on the c-plane substrate exhibited a 60° rotation. These findings would be applicable to control the orientation of ZnTe epilayer surface for various device applications and for various physical property characterizations.

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Acknowledgements

This work was supported in part by Waseda University Research Initiatives, “Early Bird” Grant for young researcher at Waseda Research Institute for Science and Engineering. The Research Grant from collaboration between Mitsubishi Materials Corporation and Faculty of Science and Engineering, Waseda University, and a Research Fellowship for Young Scientists from the Japan Society for the Promotion of Science (JSPS). One of the authors (T.N.) acknowledges the support of the Foundation of Ando Laboratory.

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Authors and Affiliations

  1. Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo, 169-8555, Japan

    Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita,  Shota Hattori, Takeru Kizu, Wei-Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki &  Masakazu Kobayashi

  2. Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Shinjuku, Tokyo, 169-0051, Japan

    Masakazu Kobayashi

  3. Technology Development Group, JX Nippon Mining & Metals Corporation, Chiyoda, Tokyo, 100-8164, Japan

    Toshiaki Asahi

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  1. Taizo Nakasu
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  2. Takayuki Aiba
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  3. Sotaro Yamashita
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  4. Shota Hattori
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  5. Takeru Kizu
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  6. Wei-Che Sun
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  7. Kosuke Taguri
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  8. Fukino Kazami
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  9. Yuki Hashimoto
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  10. Shun Ozaki
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  11. Masakazu Kobayashi
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  12. Toshiaki Asahi
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Correspondence to Taizo Nakasu.

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Nakasu, T., Aiba, T., Yamashita, S. et al. Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates. J. Electron. Mater. 45, 4742–4746 (2016). https://doi.org/10.1007/s11664-016-4700-5

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  • DOI: https://doi.org/10.1007/s11664-016-4700-5

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