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Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

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Abstract

ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

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Authors and Affiliations

  1. Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku, Tokyo, 169-8555, Japan

    Taizo Nakasu, Wei-Che Sun & Masakazu Kobayashi

  2. Kagami Memorial Research Institute for Materials Science and Technology, Waseda University, Shinjuku, Tokyo, 169-0051, Japan

    Masakazu Kobayashi

  3. Technology Development Group, JX Nippon Mining & Metals Corporation, Chiyoda, Tokyo, 100-8164, Japan

    Toshiaki Asahi

Authors
  1. Taizo Nakasu
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  2. Wei-Che Sun
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  3. Masakazu Kobayashi
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  4. Toshiaki Asahi
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Correspondence to Taizo Nakasu.

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Nakasu, T., Sun, WC., Kobayashi, M. et al. Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure. J. Electron. Mater. 46, 2248–2253 (2017). https://doi.org/10.1007/s11664-016-5165-2

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  • DOI: https://doi.org/10.1007/s11664-016-5165-2

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