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Quantitative Analysis of Porosity and Transport Properties by FIB-SEM 3D Imaging of a Solder Based Sintered Silver for a New Microelectronic Component

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Abstract

As part of development of a new assembly technology to achieve bonding for an innovative silicon carbide (SiC) power device used in harsh environments, the aim of this study is to compare two silver sintering profiles and then to define the best candidate for die attach material for this new component. To achieve this goal, the solder joints have been characterized in terms of porosity by determination of the morphological characteristics of the material heterogeneities and estimating their thermal and electrical transport properties. The three dimensional (3D) microstructure of sintered silver samples has been reconstructed using a focused ion beam scanning electron microscope (FIB-SEM) tomography technique. The sample preparation and the experimental milling and imaging parameters have been optimized in order to obtain a high quality of 3D reconstruction. Volume fractions and volumetric connectivity of the individual phases (silver and voids) have been determined. Effective thermal and electrical conductivities of the samples and the tortuosity of the silver phase have been also evaluated by solving the diffusive transport equation.

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Acknowledgements

This work is part of a collaborative research program with the European consortium SICRATES and is funded by Cluster EURIPIDES (European Smart Electronic Systems). We gratefully acknowledge technical support by ST Microelectronics in Tours, and offer special thanks to Franck Dosseul and Alexandre Seigneurin. We also thank Laurent Guilbaud and Dominique Leduc from Thales Microelectronics for providing the samples. The authors would like to thank the CERTeM 2020, owner of the FIB-SEM equipment.

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Authors and Affiliations

  1. Laboratoire de Mécanique et Rhéologie EA 2640, Université François Rabelais de Tours, 7 avenue Marcel Dassault, 37200, Tours, France

    W. Rmili, G. Le Quilliec & C. Richard

  2. Laboratoire LAT, ST Microelectronics, 10 rue Thales de Millet, 37100, Tours, France

    N. Vivet

  3. CEA Le Ripault, BP 16, 37260, Monts, France

    S. Chupin & T. Le Bihan

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  1. W. Rmili
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Correspondence to W. Rmili.

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Rmili, W., Vivet, N., Chupin, S. et al. Quantitative Analysis of Porosity and Transport Properties by FIB-SEM 3D Imaging of a Solder Based Sintered Silver for a New Microelectronic Component. J. Electron. Mater. 45, 2242–2251 (2016). https://doi.org/10.1007/s11664-015-4288-1

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