Abstract
There is a well-known direct negative correlation between dislocation density and optoelectronic device performance. Reduction in detector noise associated with dislocations is an important target for improvement of mercury cadmium telluride (Hg1−x Cd x Te)-based material in order to broaden its use in the very long-wavelength infrared (VLWIR) regime. The lattice mismatch and differences in physical properties between substrates and the epitaxial Hg1−x Cd x Te layers cause an increased threading dislocation density. As demonstrated in this work, the presence of arsenic impurities via p-type doping in molecular beam epitaxy (MBE)-grown epitaxial crystal structure increases the etch pit density (EPD) of Hg1−x Cd x Te grown on Si substrates but not on CdZnTe substrates. This EPD increase is not observed in indium n-type-doped Hg1−x Cd x Te grown on either Si or CdZnTe substrates. This trend is also seen in layers with different cadmium compositions. All of the EPD variations of the structures studied here are shown to be independent of the MBE machine used to grow the structure. The fundamentals of this higher EPD are not yet completely understood.
Similar content being viewed by others
References
T. Tung, L.V. DeArmond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens, and S.J. Tighe, Proc. SPIE 1735, 109 (1992).
T. Tung, J. Cryst. Growth 86, 161 (1988).
S.M. Johnson, M.H. Kalisher, W.L. Ahlgren, J.B. James, and C.A. Cockrum, Appl. Phys. Lett. 56, 946 (1990).
M.F. Vilela, A.A. Buell, M.D. Newton, G.M. Venzor, A.C. Hilds, J.M. Peterson, J.J. Franklin, R.E. Bornfreund, W.A. Radford, and S.M. Johnson, J. Electron. Mater. 34, 898 (2005).
M.F. Vilela, K.R. Olsson, E.M. Norton, J.M. Peterson, K. Rybnicek, D.R. Rhiger, C.W. Fulk, J.W. Bangs, D.D. Lofgreen, and S.M. Johnson, J. Electron. Mater. 42, 3231 (2013).
M.F. Vilela, S.F. Harris, R.E. Kvaas, A.A. Buell, M.D. Newton, K.R. Olsson, D.D. Lofgreen, and S.M. Johnson, J. Electron. Mater. 38, 1755 (2009).
D.D. Lofgreen, M.F. Vilela, E.P. Smith, M.D. Newton, D. Beard, and S.M. Johnson, J. Electron. Mater. 36, 958 (2007).
B.Z. Nosho, J.A. Roth, J.E. Jensen, and L. Pham, J. Electron. Mater. 34, 779 (2005).
G.K.O. Tsen, R.H. Sewell, A.J. Atanacio, K.E. Prince, C.A. Musca, J.M. Dell, and L. Faraone, Semicond. Sci. Technol. 23, 015014 (2008).
L.J. van der Pauw, Philips Res. Rep. 13, 1 (1958).
W.S. Knodle and R. Chow, Handbook of Thin-Film Deposition Processes and Techniques, ed. K.K. Schuegraf (Noyes, 1988), p. 206, ISBN 0 8155 1153 1.
P. Boieriu, C.H. Grein, H.S. Jung, and J. Garland, Appl. Phys. Lett. 86, 212106 (2005).
M. Zandian, A.C. Chen, D.D. Edwald, J.G. Pasko, and J.M. Arias, Appl. Phys. Lett. 71, 2815 (1997).
P. Capper and D. Shaw, Proceedings of SPIE, ISSN 0277-786X, CODEN PSISDG, 6294, 62940 M.1-62940 M.12 (2006).
D. Shaw, Semicond. Sci. Technol. 23, 085014 (2008).
M.A. Berding, A. Sher, M. Vanschlifgaarde, and A.C. Chen, J. Electron. Mater. 27, 605 (1998).
J.B. Varesi, A.A. Buell, J.M. Peterson, R.E. Bornfreund, M.F. Vilela, W.A. Radford, and S.M. Johnson, J. Electron. Mater. 32, 661 (2003).
A.A. Buell, L.T. Pham, M.D. Newton, G.M. Venzor, E.M. Norton, E.P. Smith, J.B. Varesi, V.B. Harper, S.M. Johnson, R.A. Coussa, T. De Leon, J.A. Roth, and J.E. Jensen, J. Electron. Mater. 33, 662 (2004).
K.D. Maranowski, J.M. Peterson, S.M. Johnson, J.B. Varesi, A.C. Childs, R.E. Bornfreund, A.A. Buell, W.A. Radford, T.J. de Lyon, and J.E. Jensen, J. Electron. Mater. 30, 619 (2001).
D.D. Edwall, M. Zandian, A.C. Chen, and J.M. Arias, J. Electron. Mater. 26, 493 (1997).
T.J. de Lyon, R.D. Rajavel, J.A. Roth, and J.E. Jensen, Handbook of Infrared Detection Technologies, ed. M. Henini and M. Razeghi (Elsevier Science, 2002), Chap. 9, pp. 321–322.
T. Colin and T. Skauli, J. Electron. Mater. 26, 688 (1997).
J.D. Benson, L.O. Bubulac, P.J, Smith, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, L.A, Almeida, A.J. Stoltz, P.S. Wijewarnasuriya, G. Brill, Y. Chen, U. Lee, M.F. Vilela, J. Peterson, S.M. Johnson, D.D. Lofgreen, D. Righer, E.A. Patten, and P.M. Goetz, J. Electron. Mater. 39, 1080 (2010).
J.M. Arias, M. Zandian, S.H. Shin, W.V. McLevige, J.G. Pasko, and R.E. DeWames, Appl. Vac. Sci. B 9, 1646 (1991).
Etchant for revealing dislocations in II-VI compounds, US Patent 4897152.
F. Gemain, M. Taupin, R. Derone, P. Ballet, and A. Lusson, J. Electron. Mater. 39, 868 (2010).
F. Gemain, I.C. Robin, S. Brochen, P. Ballet, O. Gravrand, and G. Feuillet, Appl. Phys. Lett. 102, 142104 (2013).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Vilela, M., Olsson, K., Rybnicek, K. et al. Higher Dislocation Density of Arsenic-Doped HgCdTe Material. J. Electron. Mater. 43, 3018–3024 (2014). https://doi.org/10.1007/s11664-014-3180-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-014-3180-8