Abstract
HgCdTe p-on-n double layer heterojunctions (DLHJs) for mid-wave infrared (MWIR) detector applications have been grown on 100 mm (4 inch) diameter (211) silicon substrates by molecular beam epitaxy (MBE). The structural quality of these films is excellent, as demonstrated by x-ray rocking curves with full widths at half maximum (FWHMs) of 80–100 arcsec, and etch pit densities from 1 106 to 7 106 cm−2. Morphological defect densities for these layers are generally less than 1000 cm−2. Improving Hg flux coverage of the wafer during growth can reduce void defects near the edges of the wafers. Improved tellurium source designs have resulted in better temporal flux stability and a reduction of the center to edge x-value variation from 9% to only 2%. Photovoltaic MWIR detectors have been fabricated from some of these 100mm wafers, and the devices show performance at 140 K which is comparable to other MWIR detectors grown on bulk CdZnTe substrates by MBE and by liquid phase epitaxy.
Similar content being viewed by others
References
T.J. de Lyon, D. Rajavel, S.M. Johnson, and C.A. Cockrum,Appl. Phys. Lett. 66, 2119 (1995).
T.J. de Lyon, R.D. Rajavel, J.E. Jensen, O.K. Wu, S.M. Johnson, C.A. Cockrum, and G.M. Venzor,J. Electron. Mater. 25, 1341 (1996).
N.K. Dhar, M. Zandian, J.G. Pasko, J.M. Arias, and J.H. Dinan,Appl. Phys. Lett. 70, 1730 (1997).
T.J. de Lyon, R.D. Rajavel, J.A. Vigil, J.E. Jensen, O.K. Wu, C.A. Cockrum, S.M. Johnson, G.M. Venzor, S.L. Bailey, I. Kasai, W.L. Ahlgren, and M.S. Smith,J. Electron. Mater. 27, 550 (1998).
P.S. Wijewarnasuriya, M. Zandian, D.D. Edwall, W.V. McLevige, C.A. Chen, J.G. Pasko, G. Hildebrandt, A.C. Chen, J.M. Arias, A.I. D'Souza, S. Rujirawat, and S. Sivananthan,J. Electron. Mater. 27, 546 (1998).
T.J. de Lyon, J.E. Jensen, M.D. Gorwitz, C.A. Cockrum, S.M. Johnson, and G.M. Venzor,J. Electron. Mater. 28, 705 (1999).
R. Sporken, M.D. Lange, S. Sivananthan, and J.P. Faurie,Appl. Phys. Lett. 59, 81 (1991).
R. Sporken, S. Sivananthan, K.K. Mohavadi, G. Monfroy, M. Boukerche, and J.P. Faurie,Appl. Phys. Lett. 55, 1879 (1989).
W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, and H.F. Schaake,J. Electron. Mater. 24, 505 (1995).
J.B. Varesi, R.E. Bornfreund, A.C. Childs, W.A. Radford, K.D. Maranowski, J.M. Peterson, S.M. Johnson, and L.M. Giegerich, in this issue ofJ. Electron. Mater.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Maranowski, K.D., Peterson, J.M., Johnson, S.M. et al. MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays. J. Electron. Mater. 30, 619–622 (2001). https://doi.org/10.1007/BF02665844
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02665844