Skip to main content
SpringerLink
Log in

Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The purpose of this paper is to review the trends in HgCdTe research, illustrating the discussed ideas with the latest results obtained at DEFIR (CEA-LETI and Sofradir joint laboratory). The beginning of this paper is devoted to an extended introduction to today’s issues concerning HgCdTe photodiode performance enhancement. In fact, very high-quality material is mandatory for ultrahigh performance at low temperature as well as for high noise operability at high operating temperature (HOT). Therefore, a strong effort has been carried out during the last few years for lattice-matched CdZnTe substrate and HgCdTe active layer growth improvement, leading to very large substrates and ultraflat liquid-phase epitaxy layers. The same analysis holds for diode process quality and passivation. Therefore, the photodiode process has been completely revisited in order to optimize HOT operability. Also necessary for the next generation of HOT devices, some significant progress has been made in small-pixel-pitch interconnection on silicon read-out circuits. Indeed, the first 10-μm focal-plane arrays (FPAs) have been successfully fabricated this year in the mid-wave infrared (IR) band. The latest avalanche photodiode (APD) realizations are also presented with 15-μm-pitch FPAs for passive imaging and 30-μm-pitch ultrafast arrays running at 1.5 kHz full frame rate. Linear-mode photon counting using APDs is also briefly discussed. Finally, the paper concludes on more complex structures for the third generation of IR detectors, discussing the latest achievements in dual-band FPA fabrication in various spectral bands.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Vuillermet and P. Tribolet, Proc. SPIE 7660-82 (2010). DOI:10.1117/12.850124.

  2. M. Kinch, H.F. Schaake, R.L. Strong, P.K. Liao, M.J. Ohlson, J. Jacques, C.-F. Wan, D. Chandra, R.D. Burford, and C.A. Schaake, Proc. SPIE 7660-83 (2010). DOI:10.1117/12.850965.

  3. R. Breiter, J. Wendler, H. Lutz, S. Rutzinger, T. Ihle, J. Ziegler, and I. Rühlich, Proc. SPIE 8012-88 (2011). DOI:10.1117/12.884009.

  4. P. Abbott, P.M. Thorne, and C.P. Arthurs, Proc. SPIE 8012-99 (2011). DOI:10.1117/12.885185.

  5. W. Hassis, O. Gravrand, J. Rothman, and S. Benahmed, J. Electron. Mater. (2013). DOI:10.1007/s11664-013-2728-3

  6. P. Castelein, F. Marion, J.L. Martin, J. Baylet, N. Moussy, O. Gravrand, A. Durand, J.P. Chamonal, and G. Destefanis, Proc. SPIE 5074, 52 (2003). DOI:10.1117/12.515419.

    Article  CAS  Google Scholar 

  7. O. Gravrand, E. De Borniol, L. Mollard, and G. Destefanis, J. Electron. Mater. 36, 981 (2007). DOI:10.1007/s11664-007-0151-3.

    Article  CAS  Google Scholar 

  8. O. Gravrand, L. Mollard, C. Largeron, N. Baier, E. Deborniol, and Ph. Chorier, J. Electron. Mater. 38, 1733 (2009). DOI:10.1007/s11664-009-0795-2.

    Article  CAS  Google Scholar 

  9. N. Baier, L. Mollard, J. Rothman, G. Destefanis, P. Ballet, G. Bourgeois, J.P. Zanatta, M. Tchagaspanian, S. Courtas, P. Fougères, C. Pautet, P. Pidancier, and L. Rubaldo, Proc. SPIE 7298, 23 (2009). DOI:10.1117/12.820343.

    Google Scholar 

  10. W.E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, J. Electron. Mater. 37, 1406–1410 (2008). DOI:10.1007/s11664-008-0426-3.

    Article  CAS  Google Scholar 

  11. N. Baier, L. Mollard, O. Gravrand, G. Bourgeois, J-P. Zanatta, G. Destefanis, P. Pidancier, P. Chorier, L. Tauziède, A. Bardoux, and N. Baier, Proc. SPIE 8353-85 (2012). DOI:10.1117/12.921855.

  12. B. Fieque, E. Sanson, L. Martineau, P. Chorier, O. Boulade, V. Moreau, and H. Geoffray, Proc. SPIE 8176-55 (2011). DOI:10.1117/12.898987.

  13. R. Blank, S. Anglin, J. W. Beletic, and S. Bhargava, Proc. SPIE 8453-10 (2012). DOI:10.1117/12.926752.

  14. O. Gravrand, L. Mollard, O. Boulade, V. Moreau, E. Sanson, and G. Destefanis, J. Electron. Mater. 41, 2686 (2012). DOI:10.1007/s11664-012-2181-8.

    Google Scholar 

  15. M. Kinch, J.D. Beck, C.-F. Wan, F. Ma, and J. Campbell, J. Electron. Mater. 33, 630 (2004). DOI:10.1007/s11664-004-0058-1.

    Article  CAS  Google Scholar 

  16. M. Reine, J.W. Marciniec, K.K. Wong, T. Parodos, J.D. Mullarkey, P.A. Lamarre, S.P. Tobin, K.A. Gustavsen, and G.M. Williams, J. Electron. Mater. 36, 1059 (2007). DOI:10.1007/s11664-007-0172-y.

    Article  CAS  Google Scholar 

  17. J. Rothman, G. Perrais, P. Ballet, L. Mollar, S. Gout, and J.-P. Chamonal, J. Electron. Mater. 37, 1303 (2008). DOI:10.1007/s11664-008-0449-9.

    Article  CAS  Google Scholar 

  18. J. Rothman, L. Mollard, S. Gout, L. Bonnefond, and J. Wlassow, J. Electron. Mater. 44, 1557 (2011). DOI:10.1007/s11664-011-1679-9.

    Google Scholar 

  19. G. Perrais, O. Gravrand, J. Baylet, G. Destefanis, and J. Rothman, J. Electron. Mater. 36, 963 (2007). DOI:10.1007/s11664-007-0147-z.

    Article  CAS  Google Scholar 

  20. G. Perrais, J. Rothman, G. Destefanis, and J.P. Chamonal, J. Electron. Mater. 37, 1261 (2008). DOI:10.1007/s11664-008-0459-7.

    Article  CAS  Google Scholar 

  21. A. Kerlain, G. Bonnouvrier, L. Rubaldo, G. Decaens, Y. Reibel, P. Abraham, J. Rothman, L. Mollard, and E. De Borniol, J. Electron. Mater. 41, 2943 (2012). DOI:10.1007/s11664-012-2087-5.

    Article  CAS  Google Scholar 

  22. G. Vojetta, F. Guellec, L. Matthieu, K. Foubert, P. Feautrier, and J. Rothman, Proc. SPIE 83750Y (2012). DOI:10.1117/12.921869.

  23. Y. Reibel, F. Chabuel, C. Vaz, D. Billon-Lanfrey, J. Baylet, O. Gravrand, P. Ballet, and G. Destefanis, Proc. SPIE 8012-101 (2011). DOI:10.1117/12.885583.

Download references

Author information

Authors and Affiliations

  1. CEA-LETI-Minatec, Grenoble, France

    O. Gravrand, G. Destefanis, S. Bisotto, N. Baier, J. Rothman, L. Mollard & D. Brellier

  2. Sofradir, Veurey-Voroize, France

    L. Rubaldo, A. Kerlain, V. Destefanis & M. Vuillermet

Authors
  1. O. Gravrand
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. Destefanis
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. Bisotto
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. N. Baier
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. J. Rothman
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. L. Mollard
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. D. Brellier
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. L. Rubaldo
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. A. Kerlain
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. V. Destefanis
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. M. Vuillermet
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to O. Gravrand.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Gravrand, O., Destefanis, G., Bisotto, S. et al. Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication. J. Electron. Mater. 42, 3349–3358 (2013). https://doi.org/10.1007/s11664-013-2803-9

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-013-2803-9

Keywords

Search

Navigation