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Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping

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Abstract

The influence of hafnium (Hf) doping on negative-bias temperature instability in zinc-tin oxide thin-film transistors was studied. Hafnium-zinc-tin oxide TFTs exhibited a turn-on voltage (V ON) that shifted from 0 V to −1 V with negligible changes in the subthreshold swing and field-effect mobility after 3 h of total stresses. The enhanced improvement of the V ON shift (ΔV ON) was attributed to the reduction in the interface trap density, which may result from the suppression of oxygen-vacancy-related defects by the Hf ions.

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Authors and Affiliations

  1. Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul, 133-791, South Korea

    Dong-Suk Han, Jae-Hyung Park & Yu-Jin Kang

  2. Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul, 133-791, South Korea

    Jong-Wan Park

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  1. Dong-Suk Han
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  2. Jae-Hyung Park
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  3. Yu-Jin Kang
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  4. Jong-Wan Park
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Correspondence to Jong-Wan Park.

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Han, DS., Park, JH., Kang, YJ. et al. Improvement in the Bias Stability of Zinc-Tin Oxide Thin-Film Transistors by Hafnium Doping. J. Electron. Mater. 42, 2470–2477 (2013). https://doi.org/10.1007/s11664-013-2618-8

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  • DOI: https://doi.org/10.1007/s11664-013-2618-8

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